نتایج جستجو برای: nanoscale

تعداد نتایج: 23864  

Journal: :Applied Physics Letters 2013

Journal: :Nanomaterials 2017

Journal: :Mechanical Engineering 2016

Journal: :Journal of Applied Physics 2006

2013
Hrvoje Buljan

References 1. Barnes, W. L., Dereux, A. & Ebbesen, T. W. Nature 424, 824–830 (2003). 2. Novoselov, K. S. et al. Science 306, 666–669 (2004). 3. Jablan, M., Buljan, H. & Soljačić, M. Phys. Rev. B 80, 245435 (2009). 4. Yan, H. et al. Nature Photon. 7, 394–399 (2013). 5. Ju, L. et al. Nature Nanotech. 6, 630–634 (2011). 6. Yan, H. et al. Nature Nanotech. 7, 330–334 (2012). 7. Fei, Z. et al. Nano L...

2012
Makoto Ishikawa Masaya Ichikawa Kouji Miura

We have constructed an experimental system to measure a piconewton lateral force using dual cantilevers which cross with each other. The resolution of the lateral force is estimated to be 3.3 p ± 0.2 pN, which is comparable to forces due to thermal fluctuation. This experimental apparatus works so easily that it will enable us to determine forces during nano-manipulation and nano-tribological m...

2013
Dragana Z. Vasiljevic Aleksandar Menicanin Ljiljana Zivanov

In this paper, the main activity was to investigate how different substrates, temperature of sintering and percentage of silver ink containing silver nanoparticles influence on Young’s modulus and hardness of printed silver thin samples. Samples were prepared by low cost ink-jet printing technique using Dimatix Material Printer on polyimide flexible substrate and slide glass. Characterization o...

2003
Ramesh Venugopal Supriyo Datta Ephraim Fischbach David Janes Zhibin Ren Magnus Paulsson Prashant Damle Avik Ghosh Junghoon Rhew Anisur Rahman Sayed Hasan Jing Wang Jing Guo Uday Savagaonkar Dejan Jovanovic Rajesh Venugopal

Venugopal, Ramesh. Ph.D., Purdue University, August, 2003. Modeling Quantum Transport in Nanoscale Transistors. Major Professor: Mark Lundstrom. As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale t...

Journal: :Small 2008
Kuk-Hwan Kim Ju-Hyun Kim Xing-Jiu Huang Seung Min Yoo Sang Yup Lee Yang-Kyu Choi

Nanoscale carbon-nanotube field-effect transistors (CNTFETs) have been a focus of recent studies in next-generation semiconductor architecture. However, in numerous CNTFETs that have been proposed, process variations, as well as measurement fluctuations, have occurred regularly, hampering the development of these devices for practical applications. Moreover, it is difficult to control the condu...

2006
Eric Rachlin

In recent years, a number of nanoscale devices have been demonstrated that act as wires and gates. In theory, these devices can interconnect to form general purpose architectures. Unfortunately, our ability to place individual devices is poor, and device reliability may be substantially lower than that of current CMOS technology. Nanoscale architectures must be designed with these limitations i...

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