Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional 2D systems for the development next-generation nanoelectronics. A major achievement in field is fundamental framework that explains emergence enhanced electronic direct-current conduction at walls. Here, much less explored behavior ferroelectric under applied alternating-c...

Quantum capacitance is a fundamental quantity that can directly reveal many-body interactions among electrons and is expected to play a critical role in nanoelectronics. One of the many tantalizing recent physical revelations about quantum capacitance is that it can possess a negative value, hence allowing for the possibility of enhancing the overall capacitance in some particular material syst...

Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conv...

As a general trend, nanoelectronics experiments are shifting towards frequencies so high that they become comparable to the device's internal characteristic time scales, resulting in new opportunities for studying the dynamical aspects of quantum mechanics. Here we theoretically study how a voltage pulse (in the quantum regime) propagates through an electronic interferometer (Fabry-Perot or Mac...