This paper provides an Analog Behavioral Model (ABM) in PSpice of a tunnel diode The PSpice parameters are implemented as separate parameterized blocks constructed from SPICE (ABM) controlled sources and extracted through experiment. A tunnel diode based oscillator is also proposed and simulated using circuit analysis software. The behavior of the tunnel diode is simulated and compared to the m...

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New diode structures without the field-oxide boundary across the p/n junction for ESD protection are proposed. A NMOS (PMOS) is especially inserted into the diode structure to form the NMOS-bounded (PMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. The proposed N(P)MOSbounded diodes can provide more efficient ESD protection to ...

Size reduction of electronics devices makes essential controlling the preparation of size-defined nanostructures. Today, limits of conventional lithography techniques as well as their costs are major obstacles to get over in order to go further in the integration of electronics chips. A promising solution consists in using molecular self-assembly. We present a non lithographic approach for prep...

objective: maintaining the health of oral tissues is a major goal in dentistry. however, limitations in dental materials, instruments, procedures and medications prevent achievement of this goal. advances in nanotechnology have paved the way to approach this goal. this study reviews the advances on nanotechnology in dentistry. review of literatures: in this review study, google scholar, pubmed,...

Laser Engraving adalah proses penyinaran bahan baku dengan sinar laser yang membakar permukaan material, sehingga karakter dapat terlihat pada material. Dalam penelitian ini dibuat sistem kendali mesin engraving menggunakan mikrokontroler Arduino Nano untuk UMKM builder vape. Sistem dikendalikan akan menerima sandi-G dari Aplikasi Engraver Master. diterima lewat port serial penerjemah menggerak...

this article is a report of calculation and measurements of a p+-n insb photo-diode leakage current fabricated by mesa on the basis of the calculation and measurement of different leakage currents in insb photo-diode along with its variation it shows that at relatively low reverse biases (up to about 300 mv) g-r and shunt current are dominant. but at high reverse biases the tunneling current do...

This paper presents a nano-watt bandgap voltage reference (BGR). The self-cascode structure is provided as proportional-to-absolute-temperature (PTAT) voltage. Due to the low slope of PTAT voltage, divider consisting five similar MOSFET transistors presented. resulting output will be one-fifth complementary-to-absolute-temperature and four-fifths All MOSFETs are standard CMOS biased in sub-thre...