In view of the newly synthesized two-dimensional (2D) semiconductor material WSi<sub>2</sub>N<sub>4</sub> (WSN) and 2D metal MoSH (MSH), a metal-semiconductor MSH/WSN Schottky-junction is constructed in this work. practical applications contact, presence Schottky barrier degrades device performance severely. Therefore, it crucial to obtain smaller height or even an Ohmic...

Title Evaluation of delineation of image details in semiconductor PET utilizing the normalized mutual information technique Author(s) Kubo, Naoki; Hirata, Kenji; Matsuzaki, Kazuki; Morimoto, Yuichi; Takeuchi, Wataru; Hattori, Naoya; Shiga, Tohru; Kuge, Yuji; Tamaki, Nagara Citation Nuclear medicine communications, 35(6): 677-682 Issue Date 2014-06 Doc URL http://hdl.handle.net/2115/59117 Right ...

Uniform and vertical indium-oxide nanotube (IONT) arrays embedded well in n-type InP single crystal have been successfully prepared in situ by porous InP-template-assisted chemical vapor deposition (CVD). This IONT/InP nanostructure reveals high sensitivity to humidity at room temperature, which is ascribed to the ultrahigh surface-to-volume ratio of this nanostructure and the large number of o...

Under the influence of a wiggler magnetic field, phenomenon second harmonic generation at metal–semiconductor interface, induced by surface plasma wave (SPW), has been investigated. Metals like Cu, Ag, and Al, each with thin layer n-InSb over it, are considered for our study. Laser light is incident on metal layered glass prism in attenuated total reflection Kretschmann configuration (ATR), whi...

Photoelectrochemieal etching of n-InAs (Eg = 0.36 eV) is demonstrated. Although the concentration of thermally generated minority carriers and saturation current are high compared to larger bandgap semiconductors, photocurrent to dark current ratios as high as 4:1 were obtained at low temperature (2°C) and at potentials near the flatband potential. A surface film primarily composed of arsenic o...

Defect states in nitrogen-containing float-zone silicon are investigated both n- and p-type materials using deep-level transient spectroscopy (DLTS) minority-carrier (MCTS). This enables a mapping of the defect landscape entire electronic bandgap an investigation whether properties defects depend on semiconductor type. Two defects, E1/E2 pair E4/E6 pair, investigated, no evidence is found for to

A metal–insulator–semiconductor (MIS) structure based on an inhomogeneous junction has been recently proven to be highly efficient at photoelectrochemical (PEC) water oxidation. Engineering the surrounding layer of MIS nanojunction is crucial maximizing photovoltage. Specifically, for n-type photoanode, a high work-function material required create large Schottky barrier that assists hole trans...