N-heterocyclic moieties are abundant among pharmaceuticals and agrochemicals, but a challenge for metalorganic organocatalytic transformations. We present tripeptides of the type H-Pro-Pro-Xaa as catalysts stereoselective conjugate addition reactions between substituted aldehydes electrophiles. Alkyl substituents at N-terminal proline, reactive site, were crucial high chemo- stereoselectivity. ...

Antimony telluride (Sb2Te3) thin films were obtained by metalorganic chemical vapor deposition (MOCVD). The grown on crystalline Si(100) and Al2O3(0001) amorphous SiO2 a-Al2O3 substrates. Their structural properties compared with those of the Sb2Te3/Si(111) heterostructure. In addition to effect substrate, influence pre- post-growth thermal annealing is also presented. quality discussed compari...

GaInNAs/GaAs multiple quantum well (MQW) structures for long wavelength emission were grown by atmospheric pressure metalorganic vapor phase epitaxy using trimethylgallium, trimethylindium, tertiarybutylarsine and dimethylhydrazine precursors. The dependence of the N concentration and the emission wavelength on the In concentration was investigated. The longest wavelengths were obtained with In...

Indium phosphide was deposited on InP(111)A substrates by metalorganic vapor-phase epitaxy. Then, the surface was characterized by scanning tunneling microscopy, low-energy electron diffraction, and x-ray photoelectron spectroscopy. Two reconstructions were observed: the (232) and the ()3))R30° with phosphorus coverages of 0.25 and 1.0060.05 ML ~monolayers!, respectively. The (232) was found to...

Fine-grain thin superconducting films can be prepared by metalorganic Chemical Aerosol Deposition Technology (CADT). In this paper, we present the preparation and properties of YBa2Cu307_ x films on the different substrates, Si and SrTiO 3 (100). It is shown that the zero-resistance temperature (Tc,0) of the films on SrTiO 3 substrates is about 90 K, and the critical current density (Jc) at 77 ...

The relationship between crystal quality and the properties of indium phosphide nanowires grown on silicon (111) has been studied by transmission electron microscopy, photoluminescence spectroscopy, and photoelectrochemistry. Wires with no defects and with {111} twin boundaries parallel and perpendicular to the growth direction were obtained by metalorganic vapor-phase epitaxy using liquid indi...

Localized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform infrared spectroscopy technique. Three distinctive localized vibrational modes were observed around 2850, 2922, and 2959 cm for undoped, Si-, and Mg-doped samples. These peaks are related to CH, CH2, and CH3 defect complexes, respectivel...

The metalorganic chemical vapor deposition of a highly strained InGaAsN quantum-well ~QW! surrounded by ~In!GaAsP direct barrier layers is investigated. We found that growth pause annealing with AsH3 , performed immediately before and after the growth of the QW, significantly improves the optical quality of InGaAsN QW with ~In!GaAsP direct barriers. The utilization of larger band gap barrier ma...

Highly textured lead lanthanum titanate (Pb1−xLax)TiO3 (PLT) thin films have been grown on fused quartz substrates by metalorganic chemical deposition (MOCVD). A series of PLT with different x between 0 and 0.32 were prepared and studied by Raman scattering. Raman spectra, measured at 300 K and 80 K, showed the features from the PLT film and quartz substrate. By using a “difference Raman” techn...

The metalorganic chemical vapor deposition (MOCVD) process for electronic and photonic compound semiconductor materials and devices is reviewed. We begin with an introduction to the basic MOCVD chemical reaction process, gas delivery equipment, reaction chambers, and safety. Growth mechanisms, including hydrodynamics, boundary-layer issues, thermal effects, and pyrolysis reactions, are defined,...