Many efforts have been made to model adsorption and diffusion processes in metalorganic frameworks (MOFs) in the past several years. In most of these studies, the framework has been kept rigid. In this study, we examine the effect of using a flexible framework model on the self-diffusion coefficients and activation energies calculated for several short n-alkanes and benzene in IRMOF-1 from mole...

Highly textured lead lanthanum titanate (Pb1−xLax)TiO3 (PLT) thin films have been grown on fused quartz substrates by metalorganic chemical deposition (MOCVD). A series of PLT with different x between 0 and 0.32 were prepared and studied by Raman scattering. Raman spectra, measured at 300 K and 80 K, showed the features from the PLT film and quartz substrate. By using a “difference Raman” techn...

The metalorganic chemical vapor deposition (MOCVD) process for electronic and photonic compound semiconductor materials and devices is reviewed. We begin with an introduction to the basic MOCVD chemical reaction process, gas delivery equipment, reaction chambers, and safety. Growth mechanisms, including hydrodynamics, boundary-layer issues, thermal effects, and pyrolysis reactions, are defined,...

The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2–4μm range, while the deposition temperature was in the 650o-825°C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investiga...

We have characterized the ~234! and ~432! reconstructions of GaAs and InAs ~001! that are present in a metalorganic vapor-phase epitaxy ~MOVPE! reactor. Scanning tunneling micrographs show that these surfaces are terminated with arsenic and gallium ~or indium! dimers. The ~234! dimer row exhibits a mottled appearance, which is ascribed to the adsorption of alkyl groups on some of the sites. On ...

The conceptual relationship between crystal reactivity, stability and meta-stability, solubility and morphology on the one hand and shape, charge distribution, chirality and distribution of functional groups over the molecular surfaces on the other hand is discussed, via a number of examples coming from three decades of research in the field of crystal engineering at the University of Bologna. ...

We are developing inkjet printing as a low cost, high throughput approach to the deposition of front contacts for Si solar cells. High deposition rates of 1μm per printing pass were achieved with a new metalorganic ink composed of silver(trifluoroacetate) in ethylene glycol. The printing conditions were optimized to achieve a relatively high line resolution of 120 μm. The optimal parameters for...

InGaAsN-GaAsSb type-II ‘‘W’’ quantum well structures have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and X-ray diffraction measurements indicate that thin layers (2–2.5 nm) of GaAs1 ySby and InGaAs1 xNx can be grown with compositions of y 1⁄4 0:3 and x 1⁄4 0:02. ‘‘W’’ structures with different N contents indicate that emission wavelengths in the 1.4–1.6 mm r...

Dense, high-index, and reproducible scandium oxide (Sc2O3) thin films with high mechanical strength were grown on glass substrates by metalorganic chemical-vapor deposition. The influence of deposition temperature on the microstructure evolution and optical properties of Sc2O3 thin films was investigated by x-ray diffraction, scanning electron microscopy, atomic-force microscopy, transmission e...

A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AlN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AlN/GaN SL designed for intersubband transition at a telecommunication wavelength of ~1.5 μm, is grown...