نتایج جستجو برای: lightly doped drain and source ldds
تعداد نتایج: 16884870 فیلتر نتایج به سال:
For the first time, we report the combined application of a SiGe source and a delta-doped + region in a PD SOI MOSFET to minimize the impact of floating body effect on both the drain breakdown voltage and the single transistor latch. Our results demonstrate that the proposed SOI structure exhibits as large as 200% improvement in the breakdown voltage and is completely immune to single transisto...
Carbon nanotubes (CNTs) were implanted with thermally decomposed oxygen (O2+) and nitrogen (N2+) ions at an acceleration voltage of 20 V. With a low dose of oxygen ions, the CNT-FET exhibited p-type behaviors with substantial changes in threshold voltage and in the slope of the source-drain current (l(sd)). However, at high dosages, the device exhibited metallic behaviors. After nitrogen doping...
By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evok...
Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligi...
In this paper, we have investigated the effects of asymmetry in the source and drain capacitance of metallic island single electron transistors. By comparing the source and drain Fermi levels, in the ground and source referenced biasing configurations, with the island’s discrete charging energy levels for various gate voltages, we have derived a set of closed form equations for the device thres...
Background & Aims: Inguinal hernia is one of the most common causes of surgery in the world. With increasing of age hernia prevalence rate increases so that in age over 70 years its prevalence gets at 50 percent. Different methods are described in hernia repair and each of them has its own advantages and disadvantages. At present the method of choice for inguinal hernia repair is the tension ...
As electrode material, a 10/40 nm Ti/Pt bilayer is patterned on top of a degenerately doped Si substrate with a 500 nm thick insulating capping layer, see Fig. S1. In order to avoid contamination of the CNT, we grow the carbon nanotube as a last fabrication step across the contact electrodes separated by a 1.2μm trench. The identification of a promising device is done solely via room temperatur...
We demonstrate a modulation of thermoelectric power factor via a radial dopant inhomogeneity in B-doped Si nanowires. These nanowires grown via vapor-liquid-solid (VLS) method were naturally composed of a heavily doped outer shell layer and a lightly doped inner core. The thermopower measurements for a single nanowire demonstrated that the power factor values were higher than those of homogeneo...
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