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Strain distributions around Ge quantum dots embedded in a Si matrix are computed by means of classical molecular dynamics simulations using the molecular dynamics code IMD. The Tersoff potential is employed in order to model covalent bonds. Two crystal lattice structures are considered, the cubic and hexagonal diamond structure. The distributions of the planar strain are studied for a large num...

We present an atomic scale theory of lattice distortions using strain-related variables and their constraint equations. Our approach connects constrained atomic length scale variations to continuum elasticity and describes elasticity at several length scales. We apply the approach to a two-dimensional square lattice with a monatomic basis and find the elastic deformations and hierarchical atomi...

Transition metal oxides offer a wide spectrum of properties which provide the foundation for a broad range of potential applications. Many of these properties originate from intrinsic coupling between lattice deformation and nanoscale electronic and magnetic ordering. Lattice strain thus has a profound influence on the electrical, optical, and magnetic properties of these materials. Recent adva...

We employ three dimensional x-ray coherent diffraction imaging to map the lattice strain distribution, and to probe the elastic properties of a single crystalline Ni (001) nanowire grown vertically on an amorphous SiO2 k Si substrate. The reconstructed density maps show that with increasing wire width, the equilibrium compressive stress in the core region decreases sharply while the surface ten...