نتایج جستجو برای: laser beam annealing

تعداد نتایج: 308051  

Journal: :The Review of Laser Engineering 1981

Journal: :Applied Physics Letters 1979

Journal: :international journal of advanced design and manufacturing technology 0
morteza sadegh amalnik mechanical engineering croup, department of engineering, university of qom, iran

this paper addresses the concept of co 2 laser beam machining (lbm) and development of intelligent knowledge base system (ikbs) for co 2 lbm. feature based design is used for acquiring design specification. for optimization of laser beam machining computer based concurrent engineering environment is used. the ikbs is linked to feature base cad system. the ikbs is also linked to material databas...

2010
Mumtaz Sheikh Philip Marraccini Nabeel A. Riza

Precise knowledge of laser beam parameters is a key requirement in many photonics applications including for lasers and optics used in the transportation industry. This paper reports on a novel motion-free laser beam characterization system using electronically agile digital and analog photonics such as a Digital Micromirror Device (DMD) and an analog variable focal length lens. The proposed sy...

2003
J. Toivonen T. Hakkarainen M. Sopanen

The effects of laser irradiation on the optical properties of GaAsN and GaInNAs quantum wells are studied in detail. The laser treatment is found to affect GaAsN quantum wells quite similarly to thermal annealing. The most intense photoluminescence is obtained by utilizing both thermal and laser treatments. In quaternary GaInNAs, the effects of thermal annealing and laser treatment differ from ...

Journal: :international journal of advanced design and manufacturing technology 0
mohammad akbari

the rapid melting of a semi- infinite body due to the absorption of a cw laser beam radiation has been studied. the enthalpy technique for the solution of phase change problems has been used in an explicit finite difference form to calculate the transient temperature distribution in the semi-infinite body and the growth rate of the melt pool. the technique has been modified so that it is not ne...

2010
R. E. Jones S. X. Li H. Lu

InN films grown by molecular beam epitaxy have been subjected to 2 MeV He + irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be us...

2004
D. Z. Xie B.K.A. Ngoi W. Zhou Y. Q. Fu

The development, during annealing, of periodic one-dimensional ripple structure has been investigated. The nanoscale ripple array was fabricated on silicon(0 0 1) crystal surface using focused ion beam (FIB). Annealing was performed isothermally in a flowing argon gas ambient at 670 8C. The morphology of the ripple before and after annealing was analyzed by use of atomic force microscope. The h...

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