نتایج جستجو برای: junctionless field effect transistor h dmg jlfet

تعداد نتایج: 2754831  

2013
Renan D. Trevisoli Rodrigo T. Doria Michelly de Souza

Planar MOS devices miniaturization becomes quite challenging for transistors with reduced channel length due to the loss of gate control over the channel charges. As an alternative, multi-gate devices have been developed due to the better electrostatic control of the charges, which leads to a reduction of the short-channel effects [1-6]. However, for devices with extremely reduced channel lengt...

This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product co...

Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...

Journal: :Physical review letters 2013
T J Liu J C Prestigiacomo P W Adams

We demonstrate that the proximity-induced exchange field H(ex) in ferromagnetic-paramagnetic bilayers can be modulated with an electric field. An electrostatic gate arrangement is used to tune the magnitude of H(ex) in the Al component of EuS/Al bilayers. In samples with H(ex)~2 T, we were able to produce modulations of ±10 mT with the application of perpendicular electric fields of the order o...

In this paper, using non-equilibrium Green's function method, the performance of junctionless transistors that are with Si, InP, and InGaP channels material are investigated.The shape of transistor’s gate is chosen as gate all around (GAA). Parameters such as DIBL, subthreshold slope (SS), OFF-state current, ON-state current and ON/OFF current ratio in these devices are investigated. The ...

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