The microstructure morphologies of copper bonded wafers were examined by means of transmission electron microscopy (TEM) and atomic force microscope (AFM). Morphologies of non-distinct, zigzag and distinct interfaces in the bonded layer are observed. A strong relationship between the roughness of surfaces and the individual steps in bonding initiation was found. We propose three different mecha...

This research investigated the direct bonding mechanism of dissimilar materials such as metals and plastic by the conventional hot pressing process. The press area of 4 x 4 mm2 was used for direct bonding. The results of the study showed that titanium was completely bonded to polyamide 66. On the other hand, titanium was not bonded to polystyrene. In the case of bonding material of titanium wit...

Additional resources and features associated with this article are available within the HTML version: • Supporting Information • Access to high resolution figures • Links to articles and content related to this article • Copyright permission to reproduce figures and/or text from this article With Benjamin Franklin's oil on water experiments as a historical example, people have long been fascina...

3-D interconnects hold tremendous potential to reduce global interconnect latency and power dissipation. Moreover, it allows heterogeneous integration, i.e., monolithic integration of different technologies (e.g., logic, memory, and RF). This paper explores the opportunities and challenges of the 3-D integration approach by low temperature direct Cu-to-Cu wafer bonding. A thorough description o...

Aligning polymeric nanostructures up to macroscale in facile ways remains a challenge in materials science and technology. Here we show polymeric self-assemblies where nanoscale organization guides the macroscopic alignment up to millimetre scale. The concept is shown by halogen bonding mesogenic 1-iodoperfluoroalkanes to a star-shaped ethyleneglycol-based polymer, having chloride end-groups. T...

We report a low-temperature wafer bonding method for the realization of integration of GaAsand InP-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding material sandwiched between GaAs and Si wafers, and between InP and Si wafers. The bonding process was carried out at 280-300 “C by taking advantage of the low-temperature solid-sta...

The influences of annealing temperature in N2 atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual ...