This article reports on a study on fluorescence adenosine triphosphate (ATP) detection by InP/ZnS quantum dots (QDs). We present a spectroscopic analysis displaying the effect of enzymatic reactions of glucose oxidase (GOX) and hexokinase (HEX) on the InP/ZnS quantum dots at physiological pH. The InP/ZnS quantum dots act as glucose sensors in the presence of GOX, Glu and ATP, and their luminesc...

Cyber-physical systems (CPS) are expected to transform how people interact with and manipulate the physical world and thus have farreaching impact on science and engineering. In many CPS such as next-generation vehicle networks, communication via wireless sensor and actuator networks is not only the approach to send or collect data, but also the basis of the adaptive control in the whole system...

Intermittent negative pressure (INP) applied to the lower leg and foot may increase peripheral circulation. However, it is not clear how different patterns of INP affect macro- and microcirculation in the foot. The aim of this study was therefore to determine the effect of different patterns of negative pressure on foot perfusion in healthy volunteers. We hypothesized that short periods with IN...

Concentration profiles of nitrogen in vacuumannealed pand n-type single-crystal (1 0 0) InP implanted with 1]101630 keV 15N` ions cm~2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to lo...

Metamorphic buffers ~M-buffers! consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors ~M-HEMTs!, while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology an...

We investigate the effects of assembly process and its parameters on optical polarization in InP pump lasers for telecommunications. Different measurements were performed this study, such as degree laser emission below above threshold current, well evaluation induced strain materials by measuring linear photo-luminescence. demonstrate that soldering can affect both current.

High-quality InP/ZnS core-shell nanocrystal quantum dots (NQDs) were synthesized as a heavy-metal-free alternative to the gain media of cadmium-based colloidal nanoparticles. Upon UV excitation, amplified spontaneous emission (ASE) and optical gain were observed, for the first time, in close-packed InP/ZnS core-shell NQDs. The ASE wavelength can be selected by tailoring the nanocrystal size ove...

This study was carried out in 2004 in Iguacu National Park (INP), Paraná-Brazil. The vegetation is composed of Araucaria Forest (AF) (13.1%) and Seasonal Semi-deciduous Forest (FES) (86.9%). Two types of materials were analyzed: litter (L) and woody material (W) (alive (A) and dead (D)), and classified by diameter: W1(0–0.70 cm), W2(0.71–2.5 cm), W3(2.51–7.50 cm), and W4(≥7.5 cm). The results f...

Inductively coupled plasma etching using Cl2–H2 chemistry with no additive gas CH4, Ar, or N2 is studied to realize deep 5 m ridges with smooth and vertical sidewalls. The process is optimized for nonthermalized InP wafers to avoid the use of thermal grease. Cleaning of the rear side of the wafer after etching is avoided, which is suitable for an industrial process or for critical subsequent st...

Northrop Grumman Space Technology (NGST) has recently initiated process development for fabricating 0.1 μm InGaAs/InAlAs/InP High Electron Mobility Transistor (HEMT) MMICs on 100 mm InP substrates. Successful development of this process will further reduce costs for InP HEMT MMICs and rival those of GaAs-based HEMT MMICs, including GaAs-based metamorphic HEMT technology, with superior performan...