Dissociation of the C–Cl bonds in straight chain alkyl chlorides (CH3(CH2)nCl, n= 0–5) adsorbed on the Pd(111) surface has been investigated using temperature programmed desorption (TPD) and X-ray photoemission spectroscopy (XPS). Short chain alkyl chlorides adsorbed on the Pd(111) surface at low temperatures desorb during heating because the intrinsic activation energy for C–Cl bond cleavage (...

In this study, the preparation of 111In-Bleomycin complex was optimized for temperature, time, concentration and pH during several experiments. The results showed that by the addition of bleomycin to 111In-InCl3 sample (dried under flow of N2) and heating the mixture up to 90-100°C the radiopharmaceutical can be obtained in 99.5% yield and a specific activity of 1.745 Ci/mmol. The final s...

Potassium indium bis-[hydrogen arsenate(V)], KIn(HAsO4)2, rubidium indium bis-[hydrogen arsenate(V)], RbIn(HAsO4)2, and caesium indium bis-[hydrogen arsenate(V)], CsIn(HAsO4)2, were grown under mild hydro-thermal conditions (T = 493 K, 7-8 d). KIn(HAsO4)2 adopts the KSc(HAsO4)2 structure type (space group C2/c), while RbIn(HAsO4)2 and CsIn(HAsO4)2 crystallize in the space group R-3c and are the...

A bismuth telluride (BT)/indium selenide (IS) multilayer film was deposited at room temperature by rf magnetron sputtering on a sapphire substrate in order to investigate how the multilayered structure affects the microstructure and thermoelectric properties. The effect of annealing at different temperatures was also studied. The results were compared with those from a BT film with the same thi...

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achie...

This paper compares charge transport across self-assembled monolayers (SAMs) of n-alkanethiols containing odd and even numbers of methylenes. Ultraflat template-stripped silver (Ag(TS)) surfaces support the SAMs, while top electrodes of eutectic gallium-indium (EGaIn) contact the SAMs to form metal/SAM//oxide/EGaIn junctions. The EGaIn spontaneously reacts with ambient oxygen to form a thin (∼1...

Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transis...

Any device exposed to ambient conditions will be prone to oxidation. This may be of particular importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using a focused laser beam. Polarization dependent m...

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J. Ibáñez,1,* R. Oliva,1 F. J. Manjón,2 A. Segura,3 T. Yamaguchi,4 Y. Nanishi,4 R. Cuscó,1 and L. Artús1 1Institut Jaume Almera, Consell Superior d’Investigacions Cientı́fiques, 08028 Barcelona, Catalonia, Spain 2Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team-Universitat Politècnica de València, 46022 València, Spain 3Departamento de Fı́sica Aplicada-ICMU...