This paper presents test-beam results of monolithic pixel detector prototypes fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology studied the context high spatial resolution performance. The tested detectors were on a 500 μm thick high-resistivity Floating Zone type n (FZ-n) wafer and 300 Double SOI Czochralski p (DSOI Cz-p) wafer. size is 30 × two different front-end electronics ar...