In this paper, A lens antenna with high gain is proposed. The composed of the microstrip and hemisphere dielectric lens, loaded on top. polyethylene used to fabricated lens. has dimensions 47.58 mm × 24.79 mm, which corresponding electrical size 1.586λ0×1.586λ0×0.826λ0, where λ0 free-space wavelength at 10GHz. impedance bandwidth (return loss<-10dB) 12.7%(9.24 GHz-10.51 GHz), peak 9.06 dBi. ...

A silicon-based spin transistor of novel operating principle has been demonstrated in which the current gain at room temperature is 1.4 (n-type) and 0.97 (p-type). This high current gain was obtained from a hybrid metal/semiconductor analogue to the bipolar junction transistor which functions by tunnel-injecting carriers from a ferromagnetic emitter into a diffusion driven silicon base and then...