We present, in this paper the mathematical approach for optimization nanometric thickness of the SiGeC base heterojunction bipolar transistors (HBTs), realized in BiCMOS industrial process. However, use of these components in applications microwave radio frequencies implores the use of complex structures shrinking. The base SiGeC is the active part of the transistor, the optimization of the nan...

We have characterized base-layer width and dopant distributions on cleaved cross-sections of AlxGa12xAs/GaAs heterojunction bipolar transistor ~HBT! structures using a variation of electrostatic force microscopy. The contrast observed is sensitive to the local dopant concentration through variations in the depletion layer depth extending into the sample surface, and enables delineation of indiv...

This paper presents two highly integrated receiver circuits fabricated in InP heterojunction bipolar transistor (HBT) technology operating at up to 2.5 and 7.5 Gb/s, respectively. The first IC is a generic digital receiver circuit with CMOS-compatible outputs. It integrates monolithically an automatic-gain-control amplifier, a digital clock and data recovery circuit, and a 1 : 8 demultiplexer, ...

High volume HBT (Heterojunction Bipolar Transistor) production benefits from non-destructive measurement techniques to verify the quality of every product wafer. X-ray diffraction is non-destructive and sensitive to layer thicknesses and compositions. The thin layers typical of HBT designs yield weak diffraction intensity, which are overwhelmed by the signal from the substrate in the convention...

Among the many benefits InGaP brought to the GaAs-based heterojunction bipolar transistor (HBT) over the last few years, nothing is more profound than the drastic improvement it provided in the long-term reliability. Today, it is relatively common to obtain activation energies higher than 1.5eV with InGaP HBTs operating under bias and temperature conditions suitable for modern telecommunication...

Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metalinsulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300C, were found to be dependent on how the PECVD film was deposited. A silicon nitride film deposited as a mu...

This work presents an active balanced sub-harmonic mixer (SHM) using InP double heterojunction bipolar transistor technology (DHBT) for Q-band applications. A miniature spiral type Marchand balun with five added capacitances for improved control of amplitude and phase balance is integrated with the SHM. The measured results for the SHM demonstrates a conversion gain of 1.2 dB at an RF frequency...

ETRI Journal, Volume 28, Number 3, June 2006 ABSTRACT—Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve...

In this paper we review an analytical electrothermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source, so as to include the effect of the package. The model allows to optimize the device layout through the solutio...

This paper discusses the design and implementation of an inductorless differential VCO with a maximum oscillation frequency of 20 GHz, in a 47 GHz SiGe process technology. The VCO is based on a full-wave rectification frequency-doubling technique, applied to a half rate differential single-stage feedback oscillator. It also benefits from a new circuit phenomenon named hereinafter Self Injection...