Contrary to common belief, the current emitted by a contact embedded in a two-dimensional electron gas (2DEG) is quantized in the presence of electric and magnetic fields. This observation suggests a simple, clearly defined model for the quantum current through a Hall device that does not invoke disorder or interactions as the cause of the integer quantum Hall effect (QHE), but is based on a pr...

This article presents the X-Hall sensor, a viable sensing architecture for implementing silicon-integrated, broadband, current/magnetic sensor. The sensor overcomes bandwidth limit of state-of-the-art Hall sensors by replacing spinning-current technique with dc-biased-based passive offset compensation. In this way, removes methodological due to and allows exploiting probe up its practical limit...

End-Hall ion sources have been used for almost 20 years in the optical coating industry for ion assisted deposition (IAD) and substrate pre-clean. In these applications, end-Hall ion sources have several desirable performance characteristics. They produce a large current of low energy ions, and they distribute the ions uniformly over a large coverage area. The sources can operate on either argo...

A theory of integer quantum Hall effect(QHE) in realistic systems based on von Neu-mann lattice is presented. We show that the momentum representation is quite useful and that the quantum Hall regime(QHR), which is defined by the propagator in the momentum representation, is realized. In QHR, the Hall conductance is given by a topological invariant of the momentum space and is quantized exactly...

Their citation reads “ for their discovery of a new form of quantum fluid with fractionally charged excitations”. In this talk, I will try to describe this new form of quantum fluid and its fractionally charged excitations. However, since I am speaking to a general audience and the phenomenon of the fractional quantum Hall effect may not be familiar to all, I will start my talk with a brief int...

This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and lo...