نتایج جستجو برای: gese
تعداد نتایج: 138 فیلتر نتایج به سال:
Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment
Among layered and 2D semiconductors, there are many with substantial optical anisotropy within individual layers, including group‐IV monochalcogenides MX ( M = Ge or Sn X S Se) black phosphorous (bP). Recent work has suggested that the in‐plane crystal orientation in such materials can be switched (e.g., rotated through 90°) an ultrafast, displacive (i.e., nondiffusive), nonthermal, lower‐power...
Doping is an important method to modulate the physical and chemical properties of two-dimensional materials. By substitutional doping, different group IV–VI atoms are doped in GeSe monolayers compose models, which effects investigated using first-principles calculations. The results show that local deformations geometrical structure can be observed around doping atoms. According analysis format...
In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (∼28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ∼ 206 A W(-1) under 1.5 μW cm(-2) illumination at λ = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ∼ 206 A W(-1) is excellent as compared with a GeS nanoribbon-based ...
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