We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface energy, and edge energy before and after Ge deposition is calculated in different situations. The result indicates that the Ge nanowire on GaSb is apt to gr...

Germanium nanowires (GeNWs) with p- and n-dopants were synthesized by chemical vapor deposition (CVD) and were used to construct complementary field-effect transistors (FETs). Electrical transport and X-ray photoelectron spectroscopy (XPS) data are correlated to glean the effects of Ge surface chemistry to the electrical characteristics of GeNWs. Large hysteresis due to water molecules strongly...

R. Jalilian,1 G. U. Sumanasekera,1,2,* H. Chandrasekharan,3 and M. K. Sunkara3,* 1Department of Electrical Engineering, University of Louisville, Louisville, Kentucky 40208, USA 2Department of Physics, University of Louisville, Louisville, Kentucky 40292, USA 3Department of Chemical Engineering, University of Louisville, Louisville, Kentucky 40292, USA Received 19 April 2006; revised manuscript...

The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au.