Epitaxial ultra-thin titanium dioxide films of 0.3 to ~7nm thickness on a metal single crystal substrate have been investigated by high resolution vibrational and electron spectroscopies. The data complement previous morphological data provided by scanned probe microscopy and low energy electron diffraction to provide very complete characterisation of this system. The thicker films display elec...

We report on the investigation of free-carrier absorption characteristics for epitaxially grown p-type silicon thin films in the far-infrared region ~50–200 mm!, where Si homojunction interfacial workfunction internal photoemission ~HIWIP! detectors are employed. Five Si thin films were grown by molecular beam epitaxy on different silicon substrates over a range of carrier concentrations, and t...

As novel applications using terahertz radiation are developed, there is an increased demand for sensitive terahertz detectors. This has led to new approaches for enhancing the response of terahertz detectors. Results were recently reported on the terahertz response of a p-type AlGaAs/GaAs, n-type GaAs/AlGaAs, n-type GaN/AlGaN, and p-type GaSb/GaSb Interfacial Workfunction Internal Photoemission...

The efficiency of flexible photovoltaic and organic light emitting devices is heavily dependent on the availability of flexible and transparent conductors with at least a similar workfunction to that of Indium Tin Oxide. Here we present the first study of the work function of large area (up to 9 cm(2)) FeCl3 intercalated graphene grown by chemical vapour deposition on Nickel, and demonstrate va...

This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...

Reduction of the gate length and gate dielectric thickness in complementary metal oxide semiconductor (CMOS) transistors for higher performance and circuit density aggravates problems such as poly-silicon (poly-Si) gate depletion, high gate resistance, and dopant penetration from doped poly-Si gate. To alleviate these problems in nanoscale transistors, there is immense interest in the replaceme...