In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a ...

Two competing recombination mechanisms of stimulated emission in the vicinity of 145 K have been directly observed in the temperature dependence of the optical emission spectra for high-quality, unintentionally doped gallium nitride. Our analysis of the spectra indicates that exciton-exciton scattering is responsible for stimulated emission below 145 K, while at higher temperatures an electron-...

We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction...

EPC’s enhancement mode gallium nitride (eGaN®) power transistors are a new generation of power switches offering unsurpassed performance over silicon power MOSFETs in switching speed and conduction losses with superior thermal characteristics. An accurate circuit and device model is a valuable tool for developing new topologies, building successful designs, and shortening time to market. This a...

Title of Dissertation: INVESTIGATION OF RELIABILITY IN GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS USING EQUIVALENT CIRCUIT MODELS FOR USE IN HIGH POWER, HIGH FREQUENCY MICROWAVE AMPLIFIERS Benjamin D. Huebschman, Doctor of Philosophy, 2010 Dissertation Directed By: Professor Neil Goldsman Department of Electrical and Computer Engineering Gallium Nitride (GaN) is beginning to emerge as a...

DENSE PERIODICAL PATTERNS IN PHOTONIC DEVICES:TECHNOLOGY FOR FABRICATION AND DEVICE PERFORMANCEbySABARISH CHANDRAMOHANDecember 2016 Advisor: Dr. Ivan AvrutskyMajor: Electrical EngineeringDegree: Doctor of Philosophy For the fabrication, focused ion beam parameters are investigated to successfullyfabricate dense periodical patterns, such as gratings, on hard transitio...