The results of studying the optical properties InGaAs quantum dots are presented. Single-layer with a height 5.3, 3.6 and 2.6 monolayers, as well three-stacked layers tunnel-uncoupled monolayers were formed by molecular-beam epitaxy according to Stransky--Krastanov mechanism on GaAs substrates, using partial capping annealing technique. A decrease in size makes it possible carry out blueshift p...

Employing sunlight to produce electrical energy has been demonstrated be one of the most promising solutions world’s crisis. The device convert solar energy, a cell, must reliable and cost-effective compete with traditional resources. This paper reviews many basics photovoltaic (PV) cells, such as working principle PV main physical properties cell materials, significance gallium arsenide (GaAs)...

Rapide design of integrated circuits can be achieved in using compilers and CAD tools. The time-to-market constraint is also applied to Gallium Arsenide circuits, which recently demonstrated high level integration and high speed operation. This paper describes a design methodology for a datapath generation of such circuits. On using VHDL as the input speciication language and RISC as the target...

Traumatic and non-traumatic injuries are common complications in the aging adult. Inflammation is related to aging in older individuals and may lead to an increased risk of mortality, reduced muscle strength, and decreased mobility. Unresolved inflammation could be related to the origin of many chronic diseases associated with aging such as autoimmune and neurodegenerative diseases or tumors. W...

Gallium arsenide is an outstanding nonlinear optical material, thanks to its high second-order nonlinear coefficient, wide transparency in the infrared, and possibility of integration with sources. However, phase matching for nonlinear frequency conversion is difficult to achieve in this isotropic, highly dispersive semiconductor. Although quasimatching by domain reversal was recently demonstra...

First images are presented from tests of a semi-insulating gallium arsenide X-ray imaging detector, flip-chip bonded to a current integrating CMOS readout chip. The detector is designed for applications in synchrotron X-ray imaging. The X-ray sensing part of the detector consists of a 150 mm thick GaAs photodiode containing an array of 92 100 pixels, each 150mm by 150 mm in size. Operating the ...

The key elements in the steady miniaturization process of cutting-edge semiconductor devices are the understanding and controlling of charge dynamics on the atomic scale. In detail, we address the study of charging processes of individual doping atoms and, especially, the interaction of those atoms with their surroundings. We use pulsed optical excitation in combination with scanning tunneling ...

We present designs that enable a significant increase of solar absorption in ultra-thin (100–300 nm) layers of gallium arsenide. In the wavelength range from 400–860 nm, 90–99.5% solar absorption is demonstrated depending on the photonic crystal architecture used and the nature of the packaging. It is shown that using only two hundred nanometer equivalent bulk thickness of gallium arsenide, for...

A numerical solution for the transient photoconductivity in the laser-activated bulk semi-insulating GaAs switch has been obtained, in which the influence of EL2 and other traps on the optical generation rates and the recombination rates of free carriers has been determined. Calculated photocurrent pulses are compared with the experimental results of switching measurements under conditions of l...