We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features channel above submicrometer-long wedge-like nanogap, is fulfilled by transferring ultraclean boron nitride-supported MoS 2 channels directly onto dielectric-spaced vertical source/drain stacks. Electr...