AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown ...

Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiOz interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both nand ptype silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS phys...

This correspondence points out that the scope of application of the matrix model for MOS complex gates proposed by El.ziq and Su' does not cover general structures of this type. Also, an example is given to show that a complete detection test set for single stuck-at faults may not be able to detect all multiple faults in a fanout-free and irredundant MOS complex gate. Index Terms -Fault detecti...

Floating Gate MOS (FGMOS) transistors can be very well implemented in lieu of conventional MOSFET for design of a low-voltage, low-power current mirror. Incredible features of flexibility, controllability and tunability of FGMOS yields better results with respect to power, supply voltage and output swing. This paper presents a new current mirror designed with FGMOS which exhibit high output imp...

Stochastic adaptive algorithms are investigated for online correction of spatial nonuniformity in random-access addressable imaging systems. The adaptive architecture is implemented in analog VLSI, integrated with the photosensors on the focal plane. Random sequences of address locations selected with controlled statistics are used to adaptively equalize the intensity distribution at variable s...

In this paper, based on a novel synthesis, a set of new simplified circuit design to implement the linguistic-hedge operations for adjusting the fuzzy membership function set is presented. The circuits work in current-mode and employ floating-gate MOS (FGMOS) transistors that operate in weak inversion region. Compared to the other proposed circuits, these circuits feature severe reduction of th...

A quantum model based on solutions t o t he SchrÊdinger2Poisson equations is develop ed t o investigate t he device behavior related t o gate tunneling cur rent f or nanoscale MOS F ETs wit h high2 k gate stacks . This model can model various MOS device st ructures wit h combinations of high2 k dielect ric materials and multilayer gate stacks , revealing quantum effects on t he device perf orma...

This paper presents a two stage operational transconductance amplifier realized using floating gate MOSFETs in differential inputs. A configuration of two stage operational transconductance amplifier using floating gate MOSFET for low power and low voltage applications is presented. Here we design a two stage operational transconductance amplifier using floating gate MOSFET in HSPICE 180nm CMOS...

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...