The In2S3 thin film is prepared using sulfurate method under a vacuum in a sealed tube of amorphous indium thin film. The later film is pre-deposited on glass with thermal evaporation. We have studied the effect of the temperature and the annealing time on the structural and morphological properties In2S3 thin films. The X-ray diffraction (XRD) shows a good crystallinity found until the anneali...

The adsorption of methanol by a zeolitic imidazolate framework-8 (ZIF-8) nanoparticle thin film was studied in situ using temperature-programmed desorption and X-ray photoelectron spectroscopy under low-temperature, low-pressure conditions. Partial pore penetration was observed at 90 K, but upon increasing the exposure temperature of the film to 130 K pore penetration was significantly enhanced...

The influences of annealing temperature in N2 atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual ...

The Zn1-xCuxO (x=6.27%) films under different annealing were prepared by the sol-gel method on grass. Using the X-ray diffraction (XRD), atomic force microscopy to study the influence of annealing on the microstructure and surface morphology of the film, the result of which shows that the annealing temperature did not change the wurtzite structure of ZnO and the film density under 400 degree an...

In this paper, we investigate the dynamics of tear film and the associated temperature variation for partial blinks. We investigate the mechanism of fluid supply during partial blink cycles, and compare the film thickness with observation in vivo. We find that varying the thickness of the fluid layer beneath the moving upper lid improves the agreement for the in vivo measurement of tear film th...

We have investigated the fabrication of α-Cr2O3(0001) thin film on a Au(111) surface and the effect of the antiferromagnetic feature of α-Cr2O3(0001) on the magnetic properties of ultrathin Co film on α-Cr2O3(0001). Highly oriented α-Cr2O3(0001) thin film is fabricated by oxidizing Cr(110) thin film grown on a Au(111) surface. Upon the oxidization of threefold symmetric Cr(110) thin film, the α...

Hydrogenated nanocrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition has been incorporated as the active layer in bottom-gate thin-film transistors. These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to p...

An energetic micro-initiator through integrating Al/Ni nano-multilayers with Cu film bridge was investigated in this study. The Cu film bridge was initially fabricated with wet etching, and Al/Ni nano-multilayers were alternately deposited on the surface of Cu film bridge by magnetron sputtering. The periodic layer structure of Al/Ni nano-multilayers was verified by scanning electron microscopy...

An anatase TiO₂ film sensor was prepared by a facile in-situ method on the interdigitated Au electrode deposited on the alumina substrate. The structure, morphology and the optical properties of the in-situ TiO₂ film sensor were characterized by X-ray diffraction, Scanning Electron Microscopy, and UV-vis diffuse reflectance spectra. The photo-assisted gas sensitivities of the prepared film towa...

We present the results of studies on the electrical and physical modifications to Poly(3hexylthiophene), upon thermal annealing. Thermally-induced performance modifications and thermal stability of polythiophene thin film transistors are explored. We observe substantial mobility improvements in devices annealed at low temperatures (<80°C), as well as increases in on/off ratios by two orders of ...