نتایج جستجو برای: figure of merit fom

تعداد نتایج: 21167496  

1995

A new scoring algorithm has been developed for generating wordspotting hypotheses and their associated scores. This technique uses a large-vocabulary continuous speech recognition (LVCSR) system to generate the N-best answers along with their Viterbi alignments. The score for a putative hit is computed by summing the likelihoods for all hypotheses that contain the keyword normalized by dividing...

Journal: :Silicon 2021

A pressure sensor based on two dimensional photonic crystal structure is presented. The considered for sensing a lattice of air holes surrounded by semiconductor material. waveguide with central microcavity formed filling principle depends upon the shifting wavelength peak towards higher region when raised. proposed can work in range 0–5 GPa. Using this structure, semiconductors, Si and GaAs, h...

2001
Juan M. Rius María C. Santos Josep Parrón

This communication defines a figure of merit for multiband antennas that gives an objective quantification of the similarities between radiation patterns at the different antenna operating bands.

2008
D. Cerovecki K. Malaric

Fig.2 Amplifier under test. Amplifiers can operate in classes A, B, AB, C, D, E and F [2]. We tested class A amplifier made by „Microwave Power Devices“, Model: LWA 4690-1/1837, based on bipolar devices (Fig.2). Usually, 1dB compression point, gain and two-tone third-order intercept point are measured as the amplifier figure of merit. As specified by manufacturer, the frequency range of the amp...

2007
Fred S. Lee Anantha P. Chandrakasan

With portable electronics and wireless sensor networks becoming increasingly pervasive, energy efficient radios have become an active area of research [1-3]. A critical figure of merit (FOM) for measuring radio efficiency in such applications is energy per bit. Though sub-nJ/b data reception is achievable for data rates >100Mb/s using optimized coherent architectures [4], there is a need for si...

2013
K. KHoder M. Le Roy

This letter describes an analog phase shifter (PS) able to provide a continuously tunable phase shift up to 180° by using a single all-pass unit cell. The proposed topology is compact and easy to implement, and brings an interesting compromise between phase variation, insertion and return losses. Indeed, for a 7.5:1 tuning ratio of varactor capacitance, a phase shift variation of more than 186°...

2011
Ahmed Ashry Hassan Aboushady

A 4 order RF LC Σ∆ ADC clocked at 3.6GHz and centered at 900MHz is presented. The simplicity of the ADC architecture results in a significant performance enhancement and power consumption reduction. The ADC, suitable for Software Defined Radio applications, is implemented in a standard 130nm CMOS technology. It achieves a 52dB SFDR and a 50dB SNDR in a 28MHz BW and consumes only 15mW from a 1.2...

2012
Hsuan-Ling Kao S. P. Shih Chih-Sheng Yeh Li-Chun Chang

A low phase noise, low dissipated power and small sized Ka-band voltage-controlled oscillator (VCO), using dual cross-coupled pair configuration and capacitance-splitting technique is presented. The Ka-band VCO circuit uses 0.15 μm GaAs pHEMT technology. The VCO has low phase noise, of 116.36 dBc/Hz, at a 1 MHz offset and can be tuned from 30.5 to 31.22 GHz. The figure of merit (FOM) is -192.36...

2011
Aldo Pena-Perez Edoardo Bonizzoni Franco Maloberti

An architecture for low-power Σ∆ modulators suitable for high-resolution portable sensor systems is presented. The circuit uses a single operational amplifier to achieve a thirdorder noise shaping. The two-stage op-amp employs a boosting technique that increases by 5 the slew-rate. The circuit, simulated at the transistor level using a conventional 0.18-μm CMOS technology, obtains a peak SNDR o...

Journal: :Journal of the Magnetics Society of Japan 1991

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