–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

–We investigate spin-dependent interband tunnelling in a ferromagnetic (Ga,Mn)As/ GaAs Zener diode. The ferromagnetic pn-junction is fabricated with a Mn-doped p-type GaAs layer on top of a nonmagnetic n-type GaAs substrate. When both sides of the junction are heavily doped, a large magnetic-field–dependent tunnelling effect can be seen at low temperatures in the measured current-voltage (I-V )...

We report experimental results of magnetic insulation of a space-charge dominated electron flow in a low energy vacuum diode with ferroelectric cathode. Although in the absence of the magnetic field the high current densities are measured well above the estimated space-charge limiting current, the diode is shown to be insulated by a relatively low magnetic field controlled primarily by the anod...

We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing the two dimensional device simulator MEDICI in conjunction with the shot noise model of p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation resul...

In order to increase the power of visible diode laser systems in an efficient manner, we propose spectral beam combining with subsequent sum-frequency generation. We show that this approach, in comparison with second harmonic generation of single emitters, can enhance the available power significantly. By combining two distributed Bragg reflector tapered diode lasers we achieve a 2.5-3.2 fold i...

The p-n Junction The p-n junction is a homojunction between a p-type and an n-type semiconductor. It acts as a diode, which can serve in electronics as a rectifier, logic gate, voltage regulator (Zener diode), switching or tuner (varactor diode); and in optoelectronics as a light-emitting diode (LED), laser diode, photodetector, or solar cell. In a relatively simplified view of semiconductor ma...

The spatial hole burning effect has been known to limit the performance of distributed feedback semiconductor diode lasers. As the biasing current of a single quarterly-wavelength-shifted distributed feedback diode laser increase, the gain margin reduces. Therefore, the maximum single-mode output power of the quarterly-wavelength-shifted distributed feedback diode laser is restricted to a relat...

Our goal is to develop a rectifying antenna (rectenna) applicable to solar spectrum energy harvesting. In particular, we aim to demonstrate viable techniques for converting portion of the solar spectrum not efficiently converted to electric power by current photovoltaic approaches. Novel design guidelines are suggested for rectifying antenna coupled tunneling diodes. We propose a new geometric ...

In recent years, the developments in the OLEDs have gradually reached very advantageous of existence. These advantageous characteristics include self-luminous, wide viewing angle and low power consumption, etc. which make OLEDs very useful for numerous display applications and lighting devices. To effectively improve the characteristics of an OLEDs, there are many ways to be adopted. Such as: (...

HBM and MM are important standards for ESD testing and typically correlate well. In some notable cases however, MM shows much lower failure levels than HBM. One of the most important physical mechanisms responsible for this is dynamic avalanching. This paper provides an example of such a dynamic avalanching failure, and includes a description of the physics involved. The correlation between HBM...