A numerical study on the FET-based THz wave generation and detection is presented in this paper. The numerical method is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with the existing theories, proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield. Keywords...

A biosensor can sense biological elements after interaction with the recognition element. The signal produced due to interaction of the analyte with its biochemical element is transduced by a transducer and detected by appropriate modes. The miniaturization of these biosensors at the nano level using nanostructures as a platform for sensing the analyte or its detection is called a nanobiosensor...

In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the g...

In this work, we explore various optimization techniques using bandgap engineering to enhance the performance of tunnel FETs (T-FET) using extensive device simulations. We show that the heterostructure (Si1-γGeγ source or drain) tunnel FET (HT-FET) architecture allows scaling of the device to sub 20 nm gate length regime. N-channel HT-FET is optimized to meet ITRS low standby power and high per...

In this article, the performance of silicon FinFET is compared with carbon nanotube (CNT-FET) and 2-D field-effect transistors (2D-FETs) for upcoming node CMOS logic application. Based on experimental results, a 17-stage ring oscillator (RO) circuit implemented using compact models to analyze stage-delay energy-delay performances. A tightly positioned 20- 10-nm channel-length-based CNT-FET enha...

We report on infrared (IR) spectromicroscopy of the electronic excitations in nanometer-thick accumulation layers in field-effect transistor (FET) devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectrosco...

O-(2-18F-fluoroethyl)-l-tyrosine (18F-FET) PET is a well-established method increasingly used for diagnosis, treatment planning, and monitoring in gliomas. Epileptic activity, frequently occurring in glioma patients, can influence MRI findings. Whether seizures also affect 18F-FET PET imaging is currently unknown. The aim of this retrospective analysis was to investigate the brain amino acid me...

BACKGROUND The assessment of bronchodilator-induced change in forced vital capacity (FVC) is dependent on forced expiratory time (FET) in subjects with airflow limitation. Limited information is available on the concurrent responses of FVC, forced expiratory volume in six seconds (FEV6), and FET in the bronchodilation test among patients with obstructive airways disease or in the general popula...

Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...