Ultraviolet radiation was used as a photochemical initiator to synthesize ethylene glycol dimethacrylate-methyl methacrylate copolymers. Infrared spectroscopy was used to calculate reactivity ratios and to identify the type of copolymerization. The reactivity ratios of EGDMA and MMA were calculated as 0.6993 and 1.8635, respectively. The effect of lithium perchlorate as a dopant on copolymer co...

A three-dimensional (3-D) “atomistic” simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 m MOSFET’s is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single mul...

As the size of metal-oxide-semiconductor field-effect transistors (MOSFETs) shrinks to nanoscale, the precise and reliable dopant profiling in shallow junctions has become important for device modeling and operation (Bertrand et al.,2004). Secondary ion mass spectrometry (SIMS) and spreading resistance profiling are widely used as practical characterization techniques to reveal one-dimensional ...

Semiconductor nanowires show promise for many device applications, but controlled doping with electronic and magnetic impurities remains an important challenge. Limitations on dopant incorporation have been identified in nanocrystals, raising concerns about the prospects for doping nanostructures. Progress has been hindered by the lack of a method to quantify the dopant distribution in single n...

We introduce a new class of spin-on dopants composed of organic, dopant-containing polymers. These new dopants offer a hybrid between conventional inorganic spin-on dopants and a recently developed organic monolayer doping technique that affords unprecedented control and uniformity of doping profiles. We demonstrate the ability of polymer film doping to achieve both p-type and n-type silicon by...

The undoped and tin (Sn) doped ZnO films were deposited by a spray pyrolysis method onto the glass substrates. 0.2 M solution of zinc acetate in a mixture of ethanol and deionised water, in a volume proportion of 3 :1, was employed. Dopant source was tin chloride. The atomic percentage of dopant in solution were Sn/Zn = 1%, 3% and 5%. The effect of tin doping on the optical and electrical prope...

We report a pitch invariance in cholesteric liquid crystals (CLCs) independent of temperature by mixing two chiral dopants. One dopant tends to shorten the helical pitch of the CLC, but the other makes the pitch longer, with increasing temperatures. From an analysis of temperature dependencies of the pitch for each dopant, we determined the mixing ratio of two chiral dopants for the pitch invar...

Deliberate dopant compensation has proven to be an effective way to control ingot resistivity, although the impact of compensation on carrier recombination and mobilities remains under investigation. This paper summarizes recent findings regarding the carrier transport properties of compensated silicon. The capacity of common mobility models to describe compensated silicon is reviewed and compa...

We investigate the physics behind the ‘atomistic’ dopant model widely used in drift-diffusion (DD) simulators for the study of statistical threshold voltage variations in ultra-small MOSFETs. It is found that the conventional dopant model, when extended to the extreme atomistic regime, becomes physically inconsistent with the concepts of electric potential presumed in DD device simulations. The...

Evaluation techniques for semiconductor devices are keys for device development with low cost and short period. Especially, dopant and depletion layer distribution in device is critical for electrical property of the device and is needed to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHO-SNDM) is one of the promising techniques for semiconductor device evaluation. We devel...