In this review we consider three important applications of lasers in high energy physics: γγ, γe colliders, laser cooling, positron production. These topics are actual now due to plans of construction linear ee, ee, γγ, γe colliders with energies 0.3–1 TeV. High energy photons for γγ, γe collisions can be obtained using laser backscattering. These types of collisions considerably increase physi...

Diffraction patterns of backscattered electrons can provide important crystallographic information with high spatial resolution. Recently, the dynamical theory of electron diffraction was applied to reproduce in great detail backscattering patterns observed in the scanning electron microscope (SEM). However, a fully quantitative comparison of theory and experiment requires angle-resolved measur...

In this review we consider three important applications of lasers in high energy physics: γγ, γe colliders, laser cooling, positron production. These topics are actual now due to plans of construction linear ee, ee, γγ, γe colliders with energies 0.3–1 TeV. High energy photons for γγ, γe collisions can be obtained using laser backscattering. These types of collisions considerably increase physi...

We present high-precision measurements of pure element stable isotope pairs that demonstrate mass has no influence on the backscattering of electrons at typical electron microprobe energies. The traditional prediction of average backscatter intensities in compounds was pragmatically based on elemental mass fractions. Our isotopic measurements establish that this approximation has no physical ba...

A series of simulations were conducted with Geant4 in order to verify the electron backscattering experiments performed by Tabata low Z elements Be, C and Al. In general, a quite good agreement was obtained carefully choosing physics lists employed. These results invalidate claim made before Kirihara et al about presence experimental errors Tabata’s work.

Cu-implanted SiO2 films on Si 100 have been studied and compared to unimplanted SiO2 on Si 100 using x-ray methods, transmission electron microscopy, Rutherford backscattering, and Brillouin spectroscopy. The x-ray results indicate the preferred orientation of Cu 111 planes parallel to the Si substrate surface without any directional orientation for Cu-implanted SiO2/Si 100 and for Cu-implanted...