Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at ...

Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier...

We propose a set of universal gate operations for the singlet-triplet qubit realized by two-electron spins in a double quantum dot, in the presence of a fixed inhomogeneous magnetic field. All gate operations are achieved by switching the potential offset between the two dots with an electrical bias, and do not require time-dependent control of the tunnel coupling between the dots. We analyze t...

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively v...

We employ magnetocapacitance measurements to study the spectrum of a double layer system with gate-voltage-tuned electron density distributions in tilted magnetic fields. For the dissipative state in normal magnetic fields at filling factor ν = 3 and 4, a parallel magnetic field component is found to give rise to opening a gap at the Fermi level. We account for the effect in terms of parallel-f...

In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, tri...

1. Abstract Low-field mobilities for (100) and (110) substrate orientations in single-gate (SG) and double-gate (DG) operation modes are compared. It is argued that for the same gate voltage twice as high carrier concentration in DG ultra-thin body (UTB) SOI as compared to the SG mode leads to a higher relative occupation of primed subband ladder for (100) substrate orientation. Efficient scatt...