نتایج جستجو برای: doherty power amplifier

تعداد نتایج: 501236  

Journal: :IEEE Journal of Solid-state Circuits 2021

A quadrature digital power amplifier (PA) with hybrid Doherty and impedance boosting (HDIB) technique is presented for deep back-off (PBO) efficiency enhancement in the complex domain. Less power-combining ways dc supplies are required proposed PA comparing to previously reported works PBO enhancement. reconfigurable matching network (RMN) based on a novel transformer more freedom achieve flexi...

2011
Ramon Beltran Frederick H. Raab

H igh efficiency linear amplification is of great interest in modern communication systems as it increases talk time, decreases power consumption , decreases heat dissipation, and improves reliability. The efficiency of linear power amplifiers (PAs) is highest at the peak output power (PEP) and decreases significantly for low amplitudes, as shown in Figure 1. Signals with time-varying amplitude...

Journal: :IEEE Access 2023

This paper presents a 2.8-3.8 GHz broadband 2-stage fully differential Doherty power amplifier using direct interstage division based on 2-μmInGaP/GaAs HBT process for 5G new radio handset applications. A compact transformer-less network is proposed carrier and peaking amplifiers. The ratio at the designed to dynamically vary according input level provide higher gain desired load impedance modu...

Journal: :IEEE Transactions on Circuits and Systems II: Express Briefs 2018

Journal: :IEEE Journal of Solid-state Circuits 2022

This article presents a broadband fully integrated Doherty power amplifier (DPA) using continuous-mode combining load. It is illustrated that the impedance condition in back-off and saturation for operation can be achieved with simple inverter network (IIN) realized lumped components gallium nitride (GaN) monolithic microwave circuits (MMICs). A DPA was designed fabricated 250-nm GaN process to...

2004
S. Wood R. Pengelly

Last month, Part 1 of this article introduced the new CMC (Curtice/Modelithics/Cree) non-linear LDMOS FET transistor model. The CMC model was described, and its utility demonstrated by making extractions on a 1 watt wafer-probeable FET. In Part 2, this device is used as the core of a 30 watt model to show the scalability to larger devices. The 30 watt model is built up by adding appropriate pac...

Journal: :IEICE Electronics Express 2023

In this letter, a 41-GHz Doherty power amplifier (PA) in standard 65nm CMOS technology is introduced for 5G New Radio (NR) applications. The proposed PA implements the transformer-based parallel-combined structure to enhance power-added efficiency (PAE). A tunable 90-deg hybrid coupler output phase compensation. This work achieves saturated (Psat) of 19.4dBm and an OP1dB 18.6dBm at 41.5GHz unde...

In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...

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