Using the time domain master equation for a complex electric-field pulse envelope, we find analytical results for the optical spectra of passively mode-locked semiconductor lasers. The analysis includes the effect of optical nonlinearity of semiconductor lasers, which is characterized by a slow saturable amplifier and absorber. Group velocity dispersion, bandwidth limiting, and self-phase modul...

In new optical pulse generator using delayedinterference-signal-wavelength-converter (DISC)-type all-optical gate, we injected sinusoidally modulated light to ring cavity. With this way, externally modulated laser oscillation and mode-locked pulse laser oscillation occurred. These generated pulse’s widths and repetition frequencies are 27 ps, 10.5 GHz and 2.1 ps, 10.5 GHz, respectively. Keyword...

A monolithically integrated 16×16 Quantum Well Semiconductor Optical Amplifier switch is demonstrated. The switch has a 2dB facet-to-facet gain, a mean power penalty of 3dB and worst path power penalty < 5.5dB operating at 10Gb/s. Keywords-SOA;Optical switch

We develop a perturbation theory for calculating the effects of saturation on nondegenerate four-wave mixing between short optical pulses in a semiconductor optical amplifier. Saturation due to ultrafast intraband dynamics like carrier heating and spectral hole burning is found to be important for pulses on the order of 10–20 ps or less.

Optical network based on wavelength-division-multiplexing (WDM) technology will be a most active research topic in the 21st century. This paper describes a WDM multiple-wavelength transmitter and several key corresponding devices for optical network, including ASE spectrum-sliced multiplewavelength optical source, optical add/drop multiplexer (OADM), semiconductor optical amplifier (SOA), as we...

Abstract We report a low-cost manufacturing approach for fabricating monolithic multi-wavelength sources dense wavelength division multiplexing (DWDM) systems that offers high yield and eliminates crystal regrowth selective area epitaxy steps are essential in traditional fabrication methods. The source integrates an array of distributed feedback (DFB) lasers with passive coupler semiconductor o...

We demonstrate 10Gbit/s operation of two different types of monolithic photocurrent driven wavelength converters (PD-WC). These photonic integrated circuits use a Semiconductor Optical Amplifier (SOA)-PIN photodetector receiver to drive an Electro-absorption (EA), or Mach-Zehnder (MZ) modulator that is integrated with a SGDBR tunable laser. We demonstrate improvements in optical bandwidth, inse...

An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.