The calculations of the charge distribution in the C60-based FET structure are presented. A simple model is proposed to describe the distribution of injected electrons or holes between two-dimensional layers. The calculations show that the relative layer charges are independent on the total amount of injected charges. The charge density is maximal on the surface layer and drops exponentially wi...

The bipolarlFET characteristics of the ZDEG-HBT (TwoDimensional Electron Gas Base p-n-p AIGaAs/GaAs Heterojunction Bipolar Transistor) are analyzed extensively by a two-dimensional numerical simulator based on a drift-diffusion model. For bipolar operations at high collector current densities, it is confirmed that the cutoff frequency f r is determined mainly by the collector transit time of ho...

In a two dimensional electron system (2DES), coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET). T...

Electron micrographs of CCL237 and FET cells (two slowly growing, differentiated human colon carcinoma lines) revealed enlarged mitochon dria with few cristae. Polarographic measurement of respiratory activity in mitochondria isolated from these cell lines was compared to that of C'V-I cells (a normal monkey kidney epithelial line) and MIP101 cells (another human colon carcinoma line), both of ...

The FET family of proteins is composed of FUS/TLS, EWS/EWSR1, and TAF15 and possesses RNA- and DNA-binding capacities. The FET-proteins are involved in transcriptional regulation and RNA processing, and FET-gene deregulation is associated with development of cancer and protein granule formations in amyotrophic lateral sclerosis, frontotemporal lobar degeneration, and trinucleotide repeat expans...

An intelligent shRNA expression device (iRed) contains the minimum essential components needed for shRNA production in cells, and could be a novel tool to regulate target genes. However, general delivery carriers consisting of cationic polymers/lipids could impede function of a newly generated shRNA via electrostatic interaction in the cytoplasm. Recently, we found that faint electric treatment...

A reusable extended-gate field-effect transistor (FET) sensor with an 11-ferrocenyl-1-undecanethiol (11-FUT) modified gold electrode was developed for applying to enzyme immunoassay. It was found that the 11-FUT modified FET sensor detected a thiol compound 50 times or more repeatedly after a treatment with a 5% hydrogen peroxide solution. The gate-voltage shift of the FET sensor showed a fairl...

We explore spin and charge transport phenomena in two dimensional electron gas in presence of Rashba spin-orbit coupling connected to two ideal Ferromagnetic leads. In particular we show through a combination of analytical and numerical calculation that the spin polarization which is transported depends on the Magnetization direction of ferromagnet even if the magneti-zation of both FM's are pa...

Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm(2) V(-1) s(-1), which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggestin...