نتایج جستجو برای: diluted magnetic semiconductors
تعداد نتایج: 374875 فیلتر نتایج به سال:
Application of Pair Approximation to Bound-Magnetic-Polaron State in Diluted Magnetic Semiconductors
of 3d transition metals (Sc, Ti, Cr, Mn , Fe, Co, Ni) in both far and close situations were studied based on spin polarised density functional theory using the generalized gradient approximation (LDA) with SIESTA code. The electronic structures show that zigzag (0,9) GaAs nanotubes are non-magnetic semiconductors with direct band gap. It was revealed that doping of 11.11 % Fe and Mn concentrati...
Photo-induced magnetic solitons and the slow relaxation mechanism in diluted magnetic semiconductors
The current status and prospects of research on ferromagnetism in semiconductors are reviewed. The question of the origin of ferromagnetism in europium chalcogenides, chromium spinels and, particularly, in diluted magnetic semiconductors is addressed. The nature of electronic states derived from 3d of magnetic impurities is discussed in some detail. Results of a quantitative comparison between ...
The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic semiconductors (DMSs) and oxides, and later in (Ga,Mn)As materials has inspired a great deal of research interest in a field dubbed “spintronics” of late, which could pave the way to exploit spin in addition to charge in semiconductor devices. The main challenge for practical application of the DMS materials is the a...
Diluted ferromagnetic III-V semiconductors typically show a high degree of compensation. Compensation is connected to the presence of comparable densities of charged defects of either sign. This naturally leads to the development of strong correlations between defect positions during growth and annealing. We show that these correlations are required to understand the experimentally observed tra...
Diluted ferromagnetic III-V semiconductors typically show a high degree of compensation. Compensation is connected to the presence of comparable densities of charged defects of either sign. This naturally leads to the development of strong correlations between defect positions during growth and annealing. We show that these correlations are required to understand the experimentally observed tra...
We report a detailed magnetic and structural analysis of highly reduced Co d displaying an anomalous Hall effect (AHE). The temperature and field dependen transmission electron microscopy clearly establish the presence of nano-sized s clusters of ~8–10 nm size in the films at the interface. The co-occurrence of s AHE raises questions regarding the use of the AHE as a test of the intrinsic natu ...
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