Ferroelectric SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by spin coating onto Pt/Ti/SiO2/Si substrate and crystallized using a domestic microwave oven. It was studied the influence of the heat flux direction and the duration of the thermal treatment on the films crystallization. An element with high dielectric loss, a SiC susceptor, was used to ab...

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is pr...

Abstract (Pb,Nb)(Zr,Sn,Ti)O3 antiferroelectric (AFE) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol–gel process. The electric field-induced antiferroelectric-to-ferroelectric (AFE–FE) phase transformation behaviour and its dependence on the temperature were examined by investigating the dielectric constant and dielectric loss versus temperature and electrical field. ...

A theory is presented for the dispersion relations of the nonlinear phonon-polaritons arising when phonons are coupled to the electromagnetic waves in multilayered structures of nonlinear materials. The calculations are applied to a multilayered structure consisting of a thin film surrounded by semi-infinite bounding media where each layer may have a frequency dependent dielectric function and ...

In this work, nanostructured TiO2 and Cr-doped TiO2 thin films were deposited on glass substrate through sonochemical-chemical vapor deposition (CVD) method. The resulting thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible absorption spectroscopy, and photoluminescence spectroscopy techniques. The TiO2 thin film has nanocubic morphology and ...

We demonstrate control of the surface plasmon polariton wavevector in an active metal-dielectric plasmonic interferometer by utilizing electrooptic barium titanate as the dielectric layer. Arrays of subwavelength interferometers were fabricated from pairs of parallel slits milled in silver on barium titanate thin films. Plasmon-mediated transmission of incident light through the subwavelength s...

The fabrication of low-voltage flexible organic thin film transistors using zirconia (ZrO(2)) dielectric layers prepared via supercritical fluid deposition was studied. Continuous, single-phase films of approximately 30 nm thick ZrO(2) were grown on polyimide (PI)/aluminum (Al) substrates at 250 °C via hydrolysis of tetrakis(2,2,6,6-tetramethyl-3,5-heptane-dionato) zirconium in supercritical ca...

Dielectric fluctuations underlie a wide variety of physical phenomena, from ion mobility in electrolyte solutions and decoherence in quantum systems to dynamics in glass-forming materials and conformational changes in proteins. Here we show that dielectric fluctuations also lead to noncontact friction. Using high sensitivity, custom fabricated, single crystal silicon cantilevers we measure ener...