Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

We report on experimental and theoretical studies of plasmon-induced effects in a hybrid nanostructure composed of light-harvesting complexes and metallic nanoparticles in the form of semicontinuous silver film. The results of continuous-wave and time-resolved spectroscopy indicate that absorption of the light-harvesting complexes is strongly enhanced upon coupling with the metallic film spaced...

Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures that can provide perfect optical benefits but also bring undesirable degradation of electrical performance. Here we propose a novel approach to design high-...

Among all organic semiconductors, pentacene has been shown to have the highest thin film mobility reported to date. The crystalline structure of the first few pentacene layers deposited on a dielectric substrate is strongly dependent on the dielectric surface properties, directly affecting the charge mobility of pentacene thin film OTFTs. Herein, we report that there is a direct correlation bet...

This article presents the use of a microstrip dual resonator for nondestructive permittivity characterization of a ferroelectric thin film at microwave frequencies. The dual-resonator measurement fixture consists mainly of two capacitively coupled microstrip resonators, with the ferroelectric thin film covering the gap between the two resonators. The dielectric constant and loss tangent of the ...

Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...

Nowadays, II – IV group semiconductor thin films have attracted considerable attention from the research community because of their wide range of application in the fabrication of solar cells and other opto-electronic devices. Cadmium zinc sulfide (Zn-CdS) thin films were grown by chemical bath deposition (CBD) technique. X-ray diffraction (XRD) is used to analyze the structure and crystallite ...

[email protected] Abstract – The CdO thin films were deposited using NaOH as the complexing agent by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The UV-VIS-NIR spectroscopy was used for film characterization. The deposited CdO thin film shows high absorbance in the UV region and low in the visible to near IR region of the spectroscopy. The energy band gap of the deposi...

Basic assumption and accuracy of complex permittivity measurement by perturbation technique are proposed to be verified by FDTD simulation of experimental cavity with QuickWave-3D. Determination of dielectric constant and loss factor of a piece of wet movie-film in rectangular resonator is shown to be very sensitive to film position and approved to be valid for low contents of water.