3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability. In this contribution, we have shown that 22nm 3T1D memory cells present significant tolerance to high levels of device parameter fluctuation. Moreover, we have observed that the variability of the write access transistor has turn into the more detrimenta...

The THz spectrum lies between microwaves and the mid-infrared, a region that remains largely unexplored mainly due to the bottleneck issue of lacking compact, solid state, emitters and detectors. Here, we report on a novel asymmetric-nanochannel device, known as the self-switching device, which can operate at frequencies up to 2.5 THz for temperature up to 150 K. This is, to our knowledge, not ...

We have investigated the role of temperature in the degradation of GaN High-Electron-Mobility-Transistors (HEMTs) under high-power DC stress. We have identified two degradation mechanisms that take place in a sequential manner: the gate leakage current increases first, followed by a decrease in the drain current. Building on this observation, we demonstrate a new scheme to extract the activatio...

A temperature transmitter is an electronic device that converts the temperature measured by a sensor to the proportional electrical or digital value. It is necessary to measure the resistance of a sensor with high accuracy (at the input terminals of the transmitter) for platinum sensors applications. The temperature calculation depends on the functional relationship to the measured resistance. ...

We describe a device for dual channel body temperature monitoring. The device can operate as a real time monitor or as a data logger, and has Bluetooth capabilities to enable for wireless data download to the computer used for data analysis. The proposed device is capable of sampling temperature at a rate of 1 sample per minute with a resolution of 0.01 °C . The internal memory allows for stand...

We demonstrated a flexible resistive random access memory device through a low-temperature atomic layer deposition process. The device is composed of an HfO2/Al2O3-based functional stack on an indium tin oxide-coated polyethylene terephthalate substrate. After the initial reset operation, the device exhibits a typical bipolar, reliable, and reproducible resistive switching behavior. After a 104...

We demonstrate the fabrication and operation of an integrated device containing a nanoelectromechanical system and an integrated detector. This on-chip silicon nanochannel field effect transistor is used to measure the motion of a silicon nanomechanical resonator at room temperature. Furthermore, we describe the operation of the device as a silicon-based room-temperature on-chip amplifier for i...