نتایج جستجو برای: density of states dos

تعداد نتایج: 21340449  

جلالی اسدآبادی, سعید, خردمند, فاطمه ,

 In this work structural, electronic and magnetic properties of alpha and gamma phases of cerium crystal have been calculated by means of the LDA and LDA+U methods. The equilibrium volume and magnetic moment obtained from the GGA approximation in agreement with the experiment are equal to 27.64 Å3 and 0.00018 µB, respectively. This agreement shows that the 4f electrons in alpha phase are itiner...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه سیستان و بلوچستان - دانشکده مهندسی شیمی 1391

there is no doubt that human being needs to become integrated with industry and industry needs to be progressed, daily. on the other hand, serious events in industrial units specially in oil industries has been shown that such damages and events are industry related ones. the consequence of such events and damages which resulted in chemical and poisoned explosions and loss of life and property ...

1999
P. D. Bogdanoff B. Fultz S. Rosenkranz

The phonon density of states of elemental Au, Cu, and Cu3Au with L12 chemical order were measured by inelastic neutron scattering and used to calculate the vibrational entropy of formation of the ordered compound from the elemental metals. A vibrational entropy of formation of (0.0660.03) kB /atom at 300 K was obtained, with the vibrational entropy of the ordered alloy being larger than that of...

2015
S. Shen Paul Ohodnicki Michael E. McHenry P. R. Ohodnicki S. J. Kernion M. E. McHenry

Composition dependence of resistivity is studied in amorphous (Fe 100Àx Co x) 89Ày Zr 7 B 4 Cu y (0 x 50, y ¼ 0, 1) alloys. The two-current model proposed by Mott for crystalline materials is extended to a disordered amorphous system where s-d scattering is dominant in electron conduction. A rigid-band assumption is made due to the small atomic number difference between Fe and Co. Band structur...

Journal: :Physical review. B, Condensed matter 1988
Sa-yakanit Choosiri Glyde

Two-dimensional electron systems (2D ES}in a perpendicular magnetic field B display fascinating quantum oscillations. ' Examples of 2D ES's are electrons confined to interfaces in GaAs-Ga& „Al„As layered heterostructures and electrons at surfaces in Si metal-oxidesemiconductor field-effect transistors (MOSFET's). Earliest interest was in electron transport properties, the integer quantum hall e...

2010
P. D. García S. Smolka S. Stobbe P. Lodahl

We prove Anderson localization in a disordered photonic crystal waveguide by measuring the ensembleaveraged extinction mean-free path, e, which is controlled by the dispersion in the photon density of states DOS of the photonic crystal waveguide. Except for the very low DOS case, where out-of-plane losses are non-negligible, e can be approximated to be the localization length . The extinction m...

پایان نامه :دانشگاه آزاد اسلامی - دانشگاه آزاد اسلامی واحد تهران مرکزی - دانشکده علوم پایه 1390

abstract in this study, we synthesized a novel template polymer by using methacrylic acid (mma) as functional monomer, ethylene glycol dimethacrylate(egdma) as cross linker, 2,2-azobisisobutyronitrile (aibn) as initiator and olanzapine as targeted molecule in the presence of chloroform and acetonitrile as solvent. the products have been characterized and confirmed by (chn)elemental analysis,...

Journal: :Physical review letters 2014
A Mottaghizadeh Q Yu P L Lang A Zimmers H Aubin

We report the study of gold-SrTiO3 (STO)-gold memristors where the doping concentration in STO can be fine-tuned through electric field migration of oxygen vacancies. In this tunnel junction device, the evolution of the density of states (DOS) can be followed continuously across the metal-insulator transition (MIT). At very low dopant concentration, the junction displays characteristic signatur...

2003
C. Stampfl

It has been demonstrated recently that the stoichiometry of rocksalt TaN can be tuned by N2 pressure and temperature, yielding material that ranges from highly conductive to insulating. Using density functional theory, we investigate the atomic and electronic structure and formation energy of defective TaN structures. The calculations predict that Ta and N vacancies form under N-rich and N-poor...

2013
J. Bertomeu J. Puigdollers J. Andreu

One of the most interesting aspects of amorphous semiconductor multilayers is their application in studying the interfaces between different a-Si:H based alloys, because of the great number of interfaces that a multilayer structure can contain. There are several magnitudes, such as the additional hydrogen content at interfaces [1,2] or the density of states (DOS) per interface [3-7] that can be...

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