نتایج جستجو برای: cu ti contact

تعداد نتایج: 255205  

2016
Tongfei Shi Jian Chen Jianqiang Zheng Xinhua Li Bukang Zhou Huaxiang Cao Yuqi Wang

We have fabricated organic-inorganic hybrid perovskite solar cell that uses a Ti/Au multilayer as cathode and does not use electron transport materials, and achieved the highest power conversion efficiency close to 13% with high reproducibility and hysteresis-free photocurrent curves. Our cell has a Schottky planar heterojunction structure (ITO/PEDOT:PSS/perovskite/Ti/Au), in which the Ti inser...

2009
Beatrice Bocca Stefano Caimi Oreste Senofonte Francesco Petrucci Roberta Feliciani Maria Rosaria Milana Barbara De Berardis Luigi Paoletti Giovanni Forte

Metallic piercing which have lack of resistance to sweat corrosion might be able to release metallic ions in the local tissue producing adverse effects in the human body, including allergic contact dermatitis (ACD). The aim of this study was double: 1) the metallic characterization of piercings and 2) the release of metals (Al, Co, Cr, Cu, Fe, Ir, Mn, Ni, Pd, Pt, Rh, Ti, V and Zn) in artificial...

2010
M. Petrova

Bentonite modified with ferrocyanides of Fe, Cu and CuK was tested for sorption of Cs137 and Sr-90 and proved to be highly selective for Cs; ferrocyanides of Cu and CuK are also good sorbents for Sr. Bentonite modified with hydroxides of Ti, Sn and Sb are good for Sr removal.

Journal: :High Temperature Material Processes 2022

In this work, surface Ti-Cu-Al-V alloy was synthesized by compression plasma flows impact on Ti-6Al-4V titanium preliminarily coated copper. The treatment of Cu/Ti-6Al-4V samples carried out three pulses generated in the nitrogen atmosphere (energy density absorbed varied range 26-43 J/cm2 per pulse). phase and elemental composition, structure, microhardness friction coefficient formed were inv...

2004
L. Castoldi G. Visalli S. Morin P. Ferrari S. Alberici G. Ottaviani F. Corni R. Tonini C. Nobili M. Bersani

Interaction between 5 lm thick copper and 50 nm thin titanium films was investigated as a function of annealing temperature and time using MeV He Rutherford backscattering, X-ray diffraction and dynamic Secondary Ion Mass Spectrometry. Samples were made by depositing 10 nm of titanium on a PECVD silicon oxynitride, followed by 50 nm of titanium nitride and 50 nm of titanium in the said order. I...

2017
Jung-Yoo Choi Jae-Hyuk Sim In-Sung Luke Yeo

PURPOSE Contact and distance osteogenesis occur around all endosseous dental implants. However, the mechanisms underlying these processes have not been fully elucidated. We hypothesized that these processes occur independently of each other. To test this, we used titanium (Ti) tubes to physically separate contact and distance osteogenesis, thus allowing contact osteogenesis to be measured in th...

Journal: :Journal of the Japan Institute of Metals and Materials 1965

2003
Raymundo Arróyave Thomas W. Eagar Thomas Lord Harry S. Tuller

Ceramic/metal interfaces occur in a great number of important applications, such as ceramic/metal composites, microelectronics packaging, ceramic/metal seals, and so forth. Understanding the formation and evolution of such interfaces is therefore essential for the better design and optimization of these technologies. In this thesis, a methodology for the study of the thermochemical interactions...

2015
Satoshi Semboshi Jun Ikeda Akihiro Iwase Takayuki Takasugi Shigeru Suzuki

The effects of boron doping on the microstructural evolution and mechanical and electrical properties of age-hardenable Cu–4Ti (at.%) alloys are investigated. In the quenched Cu–4Ti–0.03B (at.%) alloy, elemental B (boron) is preferentially segregated at the grain boundaries of the supersaturated solid-solution phase. The aging behavior of the B-doped alloy is mostly similar to that of conventio...

2005
A. Motayed A. V. Davydov W. J. Boettinger D. Josell I. Levin T. Zheleva G. L. Harris

Tungsten metal layer was used for the first time as an effective diffusion barrier for the standard Ti/Al/Ti/Au ohmic metallization scheme to obtain thermally stable ohmic contact suitable for high temperature applications. Comparative studies were performed on three distinct metallization schemes: 1) standard GaN/Ti/Al/Ti/Au, 2) GaN/Ti/Al/W/Au, and 3) GaN/Ti/Al/Ti/W/Au. For the GaN with doping...

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