Plasma etching process plays a critical role in semiconductor manufacturing. Because physical and chemical mechanisms involved in plasma etching are extremely complicated, models supporting process control are difficult to construct. This paper uses a 35-run D-optimal design to efficiently collect data under well planned conditions for important controllable variables such as power, pressure, e...

This work compares structural and optical properties of silicon nanocrystals prepared by two fundamentally different methods, namely, electrochemical etching of Si wafers and low-pressure plasma synthesis, completed with a mechano-photo-chemical treatment. This treatment leads to surface passivation of the nanoparticles by methyl groups. Plasma synthesis unlike electrochemical etching allows se...

Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches ...

The laser damage precursors in subsurface of fused silica (e.g. photosensitive impurities, scratches and redeposited silica compounds) were mitigated by mineral acid leaching and HF etching with multi-frequency ultrasonic agitation, respectively. The comparison of scratches morphology after static etching and high-frequency ultrasonic agitation etching was devoted in our case. And comparison of...

We report on the successful fabrication of silicon quantum wires with SiO 2 boundaries on SiGe/Si heterostructures by combining Si/SiGe/Si heteroepitaxy, selective chemical etching, and subsequent thermal oxidation. The observational result of scanning electron microscope is demonstrated. The present method provides a well-controllable way to fabricate silicon quantum wires. PACS: 81.15; 81.60;...

In this work, we introduce a maskless, resist-free rapid prototyping method to fabricate three-dimensional structures using electron beam induced deposition (EBID) of amorphous carbon (aC) from a residual hydrocarbon precursor in combination with metal-assisted chemical etching (MaCE) of silicon. We demonstrate that EBID-made patterned aC coating, with thickness of even a few nanometers, acts a...

The structure and light-emitting properties of Si nanowires (SiNWs) fabricated by a single-step metal-assisted chemical etching (MACE) process on highly boron-doped Si were investigated after different chemical treatments. The Si nanowires that result from the etching of a highly doped p-type Si wafer by MACE are fully porous, and as a result, they show intense photoluminescence (PL) at room te...