نتایج جستجو برای: chemical deposition
تعداد نتایج: 454324 فیلتر نتایج به سال:
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.
In this paper, we present and review recent developments in the high-density plasma chemical vapor deposition (HDP CVD) of silicon-based dielectric films, and of films of recent interest in the development of lower-dielectric-constant alternatives. Aspects relevant to the HDP CVD process and using the process to achieve interlevel insulation, gap filling, and planarization are discussed. Result...
An original dimensionless study of the pure evaporation and precipitation stages of a spray pyrolysis process has been performed. An estimation of he evaporation time is proposed and the influence of the main processing parameters has been investigated. For operating conditions corresponding o industrial requirements, the main limiting step of the evaporation stage is thermal transfer from the ...
Available online 23 January 2009
TING FUNG CHUNG∗,‡, TIAN SHEN∗, HELIN CAO∗,‡, LUIS A. JAUREGUI†,‡, WEI WU§, QINGKAI YU¶, DAVID NEWELL‖ and YONG P. CHEN∗,†,‡,∗∗ ∗Department of Physics, West Lafayette, Indiana 47907, USA †School of Electrical and Computer Engineering, West Lafayette, Indiana 47907, USA ‡Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA §Department of Electrical and Computer Engi...
We present a homogenization technique for rarefied gas flow over a microstructured surface consisting of patterns of periodic features. The length scale of the model domain is comparable to the mean free path of the molecules, while the scale of the surface patterns is much smaller. The flow is modeled by a system of linear Boltzmann equations with a diffusive boundary condition at the patterne...
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