نتایج جستجو برای: charges coupled device

تعداد نتایج: 874642  

2007
Stefano Bellucci Sergio Ferrara Alessio Marrani

We report on recent advances in the study of critical points of the “black hole effective potential” VBH (usually named attractors) of N = 2, d = 4 supergravity coupled to nV Abelian vector multiplets, in an asymptotically flat extremal black hole background described by 2nV + 2 dyonic charges and (complex) scalar fields which are coordinates of an nV -dimensional Special Kähler manifold.

Journal: :Journal of Nuclear Science and Technology 1990

2012
M. W. Denhoff

A device model of biological molecule sensors based on semiconductor nanowires has been developed. This model of a bioFET is based on the concept of the electrolytic absolute electrode potential. From that starting point a semiconductor device model of the nanowire solution biomolecule system was derived. The model includes the Gouy-Chapman-Stern model of the salt solution double layer, site bi...

Journal: :Foot & ankle international 1998
A D Watson A S Kelikian

We used decision-analysis modeling to determine the most cost-effective fixation device among Herbert screws, AO screws, and the Luhr plate for first metatarsophalangeal joint arthrodesis. The model considered patient-reported outcomes at minimum 2-year follow-up, patient charges for the entire course of care, and event and outcome incidences within each fixation group. AO screws had the lowest...

Journal: :Journal of High Energy Physics 2021

A bstract We find a new non BPS solution in N = 2 D 4 gauged supergravity coupled to U(1) gauge fields and matter. It consists closed universe with two extremal black holes of equal size, surrounding singularities. They have opposite magnetic charges (and no electric charges), but stay static equilibrium thanks the positive pressure cosmological constant. The geometry is perfectly symmetric und...

2000
V. Palankovski S. Selberherr

245 Abstract—We present two-dimensional simulations of onefinger power InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) before and after both electrical and thermal stress aging. It is well known that GaAs-HBTs with InGaP emitter material can be improved with respect to reliability if the emitter material covers the complete p-doped base layer forming outside the active emitter the so-calle...

Journal: :The Journal of the Institute of Television Engineers of Japan 1976

2009
Vinod R Challa M G Prasad Frank T Fisher

Vibration energy harvesting is being pursued as a means to power wireless sensors and ultra-low power autonomous devices. From a design standpoint, matching the electrical damping induced by the energy harvesting mechanism to the mechanical damping in the system is necessary for maximum efficiency. In this work two independent energy harvesting techniques are coupled to provide higher electrica...

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