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Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (~ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN i...

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The temperature dependence of the performance of 1.3m Fabry–Perot (FP) multiple-quantum-well (MQW) lasers is analyzed using detailed microscopic simulations. Both static and dynamic properties are extracted and compared to measurements. Devices with different profiles of acceptor doping in the active region are studied. The simulation takes into account microscopic carrier transport, quantum me...

The three-dimensional confinement of electrons and holes in the semiconductor quantum dot (QD) structure profoundly changes its density of states compared to the bulk semiconductor or the thin-film quantum well (QW) structure. The aim of this paper is to theoretically investigate the microwave properties of InAs/InP(311B) QD lasers. A new expression of the modulation transfer function is derive...

-This paper reviews a contactless laser-pumped minority carrier lifetime probe which is of general utility in solid-state and semiconductor material measurements. This inductively coupled radio frequency probe has been used in a diverse array of measurements. It can study minority carrier properties, for example: epitaxial heterostructure quality comparing different growth methods; wafer substr...

Further information on electronic properties, like trapped carrier density, for hydrogenated microcrystalline and polymorphous silicon thin films prepared by hot-wire chemical vapor deposition (HWCVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques can be deduced from the experimental data of the high electric field dependence of the coefficient β in the steady-state photocarri...

Element doping is commonly used to adjust the carrier concentrations in semiconductors such as thermoelectric materials. However, the doping process unavoidably brings in defects or distortions in crystal lattices, which further strongly affects the physical properties of the materials. In this work, high energy photons have been used to activate the carriers in Cu2S thermoelectric films. As a ...