نتایج جستجو برای: carbon nanotube field effect transistor

تعداد نتایج: 2573505  

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی امیرکبیر(پلی تکنیک تهران) - دانشکده مهندسی برق 1387

در فصل اول به بررسی مطالب مربوط به شناخت نانولوله های کربنی و مفاهیم اولیه نانو لوله ها پرداخته شده است. در این بخش با انواع نانولوله ها و بردارهای پایه و باندهای الکتریکی نانولوله های کربنی آشنا شده و در ادامه انواع روش های ساخت از جمله روش به کار گرفته شده در این پایان نامه آورده شده در انتها خواص مختلف نانولوله ها و همچنین کاربرد آنها به عنوان انگیزه اصلی پایان نامه بیان شده است. در فصل دوم ...

2003
Takao Someya Joshua Small Philip Kim Colin Nuckolls James T. Yardley

We have measured conductance of single-walled semiconducting carbon nanotubes in field-effect transistor (FET) geometry and investigated the device response to alcoholic vapors. We observe significant changes in FET drain current when the device is exposed to various kinds of alcoholic vapors. These responses are reversible and reproducible over many cycles of vapor exposure. Our experiments de...

2000
Yong-Hyun Kim K. J. Chang

Carbon nanotubes, which consist of only carbon atoms, were first discovered by Iijima [1] and can be thought of as a single layer of graphite that is wrapped into a cylinder. The cylindrical nanotubes are very stable and are regarded as the strongest fibers ever; nanotubes are extremely rigid to distortions along the tube axis whereas they are very flexible to those perpendicular to the axis [2...

2004
Slava V. Rotkin Karl Hess

Novel type of a field effect transistor (FET) is described. A metallic channel of a metallic nanotube FET is proposed to be switched ON/OFF by applying electric fields of a local gate. Very inhomogeneous electric fields may lower the nanotube symmetry and open a band gap, as shown by tight–binding calculations.

Journal: :Nano letters 2007
Marcus Freitag James C Tsang Ageeth Bol Dongning Yuan Jie Liu Phaedon Avouris

The photovoltage produced by local illumination at the Schottky contacts of carbon nanotube field-effect transistors varies substantially with gate voltage. This is particularly pronounced in ambipolar nanotube transistors where the photovoltage switches sign as the device changes from p-type to n-type. The detailed transition through the insulating state can be recorded by mapping the open-cir...

2002
ALI JAVEY HYOUNGSUB KIM MARKUS BRINK QIAN WANG ANT URAL JING GUO PAUL MCINTYRE PAUL MCEUEN MARK LUNDSTROM HONGJIE DAI

H igh-κdielectrics have been actively pursued to replace SiO 2 as gate insulators for silicon devices 1. The relatively low κ of SiO 2 (at 3.9) limits its use in transistors as gate lengths scale down to tens of nanometres. High-κ gate insulators afford high capacitance without relying on ultra-small film thickness, thus allowing for efficient charge injection into transistor channels and meanw...

2015
Samir Mhaske Ishan Ghosekar Pranay Bhaskar

In high speed applications, multipliers and their associated circuits like accumulators, half adders, and full adders consume a significant portion. Therefore, it is necessary to increase their performance as well as size efficiency. In order to reduce the hardware complexity which ultimately reduces an area and power, energy efficient full adders plays crucial role in Wallace tree multiplier. ...

2014
Nayana Remesh Reena Monica

Multipliers are one of the most important components in microprocessors and DSP processors [9]. Baugh Wooley is one among them and it is an array multiplier. Array multipliers have a more regular layout and it presents high speed performance. The paper deals with the design of a Baugh Wooley multiplier using Carbon Nanotube Field Effect Transistor (CNTFET). A Verilog-A formulation of the Stanfo...

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