نتایج جستجو برای: buffer layer

تعداد نتایج: 321916  

2015
Zhengyi Sun Shengwei Shi Qinye Bao Xianjie Liu Mats Fahlman

We have investigated the function of ~3 nm thick lithium fluoride (LiF) buffer layers in combination with high work function metal contacts such as coinage metals and ferromagnetic metals for use in organic electronics and spintronics. The energy level alignment at organic/LiF/metal interfaces is systematically studied using photoelectron spectroscopy and the integer charge transfer model. The ...

2015
Atsushi Sugihara Kazuya Suzuki Terunobu Miyazaki Shigemi Mizukami

Mn3Ge has a tetragonal Heusler-like D022 crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn3Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch betwe...

2011
M. Razavi Ali A. Orouji Seyed Ebrahim Hosseini

We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel...

Journal: :Microelectronics Journal 2009
P. Klason M. M. Rahman Q.-H. Hu Omer Nur R. Turan Magnus Willander

In this paper ZnO nanorods and nanodots (with and without a SiO2 buffer layer) were grown on p-Si, forming p–n heterojunctions. The nanorod devices showed no visible electroluminescence (EL) emission but showed rectifying behavior. Covering around 60% of the length of the nanorods with PMMA produced an ideality factor of 3:91 0:11 together with a reverse saturation current of 6:53 4:2 10 8 A. U...

2014
Zhan'ao Tan Shusheng Li Fuzhi Wang Deping Qian Jun Lin Jianhui Hou Yongfang Li

Low-work-function active metals are commonly used as cathode in polymer solar cells (PSCs), but sensitivity of the active metals towards moisture and oxygen results in poor stability of the devices. Therefore, solution-proceessable and stable cathode buffer layer is of great importance for the application of PSCs. Here we demonstrate high performance PSCs by employing as-prepared zirconium acet...

2010
Inhyuk Lee Seungsoo Lee Hwajeong Kim Hyunjeong Lee Youngkyoo Kim

We report the performance of polythiophene/fullerene solar cells with a hole-collecting buffer layer that was made using composite films of functionalized multi-walled carbon nanotube (f-MWCNT) and poly(3,4ethylenedioxythiphene):poly(styrenesulfonate) (PEDOT:PSS). The MWCNT was functionalized with carboxyl groups to bestow solubility in a weak base solvent for mixing with PEDOT:PSS. Results sho...

2001
Chengfeng Qiu Haiying Chen Man Wong

The dependence of the current and power efficiencies of bi-layer organic light-emitting diodes (OLEDs) on the thickness of the constituent organic layers is reported. The thickness of the electron and hole transport layers was simultaneously varied to determine the optimal configuration for power efficiency. It was verified that the inclusion of a suitable electrode buffer layer reduced the eff...

Journal: :Microelectronics Journal 2008
Weijun Luo Xiaoliang Wang Lunchun Guo Hongling Xiao Cuimei Wang Junxue Ran Jianping Li Jinmin Li

The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(1 1 1) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the morphology and crystalline properties of th...

2007
Maria Spyropoulou Konstantinos Yiannopoulos Stelios Sygletos Kyriakos Vlachos Ioannis Tomkos

We demonstrate the applicability of quantum-dot semiconductor-opticalamplifier based wavelength converters to the implementation of an ultra-high speed optical packet switching buffer. The buffer architecture consists of cascaded programmable delay stages that fully utilize the available wavelengths and thus minimize the number of wavelength converters that are required to implement the buffer....

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