The study is concentrated on the different possible protection systems for lightning and the war of Lightning Rods between scientists and sales of rods are explained. Two experimental tests (in high voltage Laboratory) were made to give the answers if delaying streamer air terminal is effective than franklin rod or not. A breakdown voltage for different air gaps are measured and compared betwee...

This paper presents the preliminary results of an investigation of the effect of the recess geometry on the breakdown characteristics of a GaAs MESFET. It is found that the angle of the recess may affect the the gate-drain breakdown voltage of the device, shallower angles performing better than sharper angles. Placing the gate contact towards the source end of the recess has also been found to ...

⎯The electrical characteristics of solid state devices such as the bipolar junction transistor (BJT), metaloxide semiconductor field-effect transistor (MOSFET), and other active devices are altered by impinging photon radiation and temperature in the space environment. In this paper, the threshold voltage, the breakdown voltage, and the onresistance for two kinds of MOSFETs (200 V and 100 V of ...

Transmission line pulse (TLP) measurements are used to demonstrate that oxynitride breakdown projections from DC measurements using conventional area and voltage-scaling techniques can be extended to the nanosecond timescale. ESD protection systems can thus be designed to prevent dielectric breakdown. Important concepts in gate dielectric breakdown such as the anode–hole injection model and are...

Composite films on the base of ZnO with different weight percentages of polypyrrole have been prepared using the hot pressing method and their current-voltage characteristics have been studied. Results show that the films have nonlinear varistor behavior and can be used to protect sensitive circuits from 110V up to 350V overvoltages. It is found that the higher the content...

For the first time, we report the combined application of a SiGe source and a delta-doped + region in a PD SOI MOSFET to minimize the impact of floating body effect on both the drain breakdown voltage and the single transistor latch. Our results demonstrate that the proposed SOI structure exhibits as large as 200% improvement in the breakdown voltage and is completely immune to single transisto...