SEGREGATION AND FRACTIONATION OF Ge ISOTOPES: COMPARISON OF EXPERIMENTAL DATA AND METEORITES. B. Luais, M.J. Toplis, L. Tissandier, and M. Roskosz. C.R.P.G., CNRS, Nancy-Université, 15, rue Notre-Dame des Pauvres, B.P.20, 54501 Vandoeuvre-les-Nancy, [email protected], D.T.P. , 14 avenue Edouard Belin, Toulouse, 31400, France, LSPES, Université de Lille1, Bâtiment C6, Villeneuve d'Ascq, 5...

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schott...

Reduction of specific energy consumption by 1 – 2% per year is typically what is considered feasible for end-use energy applications. This article tries to answer the question whether much higher rates, for example 5% and more are feasible for new equipment, installations and buildings. After examining some end-use functions in industry, buildings and the transport sector, it is concluded that ...

Cooperative games and von Neumann-Morgenstern solution. Situations when all participants collaborate with each other is known as a cooperative game. One way to describe a cooperative game is to assign, to every subset S ⊆ N def = {1, . . . , n} of the set of all the participants, the value v(S) that describes what players from S can gain if they collaborate between themselves only. Such subsets...

Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz-Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the curren...

X-ray standing waves have been employed to study the microscopic mechanism of surfactant mediated epitaxy of Ge on Si~111!. After deposition of 0.5 BL Ge on the Ga:Si~111!-6.336.3 surface we find Ga floating on the surface in a Ga-Ge bilayer with Ga in a substitutional adsorption site. Deposition of 0.5 BL Ge on the Ga:Si~111!-A33A3 surface leads to a change of the Ga adsorption site from T4 to...