نتایج جستجو برای: band gap engineering
تعداد نتایج: 516322 فیلتر نتایج به سال:
cumn2o4 nanoparticles, a semiconducting materials with tunable functionalities in solid oxide fuel cell, was successfully synthesized via a sol-gel method using its respective metal cations sources i.e. cu2+ and mn2+ in an appropriate complexing agent.the vibrational frequencies below 1000 cm-1 of the obtained materials confirmed the formation of metal-oxygen (m-o:cu-o, mn-o) bond in the sample...
Boron arsenide, the typically-ignored member of the III–V arsenide series BAs–AlAs–GaAs– InAs is found to resemble silicon electronically: its Γ conduction band minimum is p-like (Γ15), not s-like (Γ1c), it has an X1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked...
In this letter, titania nanopowder and titania-silica nanocomposite were prepared using sol-gel method. Although the size of nanocrystallites and the mass fraction percent age of rutile phase ( after phase transformation ) were increased by increasing calcination in the two samples , their size in titania-silica nanocomposite was smaller than that in pure titania . Moreover, the calculations ...
the purpose of this paper is the generalization of structure factor for rods by polygon section in two dimensional phononic crystals. if we use the plane wave expansion method (pwe) for the propagation of acoustic waves in 2d phononic crystals, structure factor will be an important quantity. in order to confirm the obtained relations, we have calculated the band structure for xy and z vibration...
zno nanorod was prepared by microwave assisted method. the crystal structure of the nano powders were confirmed by x-ray diffraction analysis and the mean particle size was estimated by the scherrer,s formula .the surface morphology of the nano particles were analyzed by using sem . the absorption spectrum of the material in the uv-vis range was recorded .the energy band gap of the material w...
Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoele...
Characterizing Atomic Composition and Dopant Distribution in Wide Band Gap Semiconductor Nanowires Using Laser-Assisted Atom Probe Tomography Ravi Agrawal, Rodrigo A. Bernal, Dieter Isheim, and Horacio D. Espinosa* Department of Mechanical Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3111, United States Department of Materials Science and Engineering, North...
In this paper, properties of reflection phase in one-dimensional quaternary photonic crystals combining dispersive meta-materials and positive index materials are investigated by transfer matrix method. Two omnidirectional band gaps are located in the band structure of considered structure. However, we limit our studies to the frequency range of the second wide band gap. We observe that the val...
Silicene monolayers grown on Ag(111) surfaces demonstrate a band gap that is tunable by oxygen adatoms from semimetallic to semiconducting type. With the use of low-temperature scanning tunneling microscopy, we find that the adsorption configurations and amounts of oxygen adatoms on the silicene surface are critical for band gap engineering, which is dominated by different buckled structures in...
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