In this paper we present a power amplifier module suitable for the 433MHz European ISM band frequency. The PA module provides a maximum 30dBm output level at 433MHz. The included power control circuit provides 30dB of dynamic range control. The overall module was designed on a single test board with a 4.8V supply voltage. The maximum output power deviation is less than 1dB over the complete con...

An active RFIC X-band phase shifter is implemented using IHP SiGe HBT 0.25 μm SGB25V technology with an improved vector sum method. The chip is formed by a three way Wilkinson power divider, three phase delays for 0-120-240 degrees, three similar RFIC LNAs and a final three way Wilkinson power combiner on the same chip and occupies an area of 4x1.8 mm2. The circuit provides both phase and ampli...

A power amplifier (PA) is a key part of the RF front-end in transmitters for a local broadband network. Today, commercial PAs are made of III-V HEMT and HBT technology with excellent results. An integrated system-on-chip power amplifier circuit using CMOS technology for cost-effective and spectrum-efficient high-speed wireless communication presents major challenges because power amplifiers hav...

in this paper a wideband single stage pseudomorphic high electron mobility transistor (PHMET) amplifier has been designed at 5.8 GHz, the input and output matching circuits have a pi form.Noise cancelling principle and sensitivity analysis are performed .Simulation results have been compared with their correspondence in [10] give 2.71 dB improvement in amplifier gain at the same noise figure (N...

In recent years, CDMA has been recognized as one of the most efficient and reliable schemes for cellular radio communications. The CDMA scheme was adopted as a new wireless communication industry standard, IS-95,1 by the Electronic Industries Association (EIA) and the Telecommunications Industry Association (TIA) in 1993 and possesses several distinct advantages:2 The spectral density is reduce...

A broadband power amplifier designed and implemented in Doherty configuration is illustrated in this paper. Both input and output networks adopt the broadband matching topology. Additionally a compensation network, consisting of a series transmission line shunted with a capacitance, is set behind the peak amplifier to avoid in-band power leakage in the low-power section while at the cost of pea...

The double-pass erbium-doped zirconia fiber amplifier (EDZFA) is proposed and demonstrated to provide a wide-band amplification as well as flat-gain operation in both the Cand L-band regions using only a single-gain medium. The proposed amplifier utilizes an erbium-doped zirconia fiber (EDZF) with erbium ion concentration of 2800 ppm as a gain medium. The medium is fabricated in a ternary glass...

An Ultra Wide Band CMOS Low Noise Amplifier (LNA) design is presented in this paper. Due to low power consumption and extremely high data rates the UWB system is bound to be popular in the end user market. The LNA is the first stage after antenna in an UWB transceiver. The LNA is accountable for providing enough gain to the signal with the bare minimum distortion. In this work we have designed ...

Since the fabrication of active electrodes has been reported and their beneficial effects scientifically confirmed, we present a CMOS bioelectric amplifier with DC rejection designed for active electrode in this paper. Analysis, design and post simulation results will be described in detail. The amplifier operating at ±0.9V supply voltage has a mid-band gain of 40dB with ±300mV dc offset reject...